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JANS1N5969D PDF预览

JANS1N5969D

更新时间： 2024-11-19 23:16:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管齐纳二极管测试
页数 文件大小 规格书
4页 578K
描述
5 WATT GLASS ZENER DIODES

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中文翻译

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JANS1N5969D 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：O-LALF-W2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.81其他特性：HIGH RELIABILITY
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：ZENER DIODE
JESD-30 代码：O-LALF-W2JESD-609代码：e0
元件数量：1端子数量：2
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：0.5 W
认证状态：Not Qualified参考标准：MIL-19500/356
标称参考电压：6.2 V表面贴装：NO
技术：ZENER端子面层：TIN LEAD
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIED最大电压容差：1%
工作测试电流：220 mABase Number Matches：1

JANS1N5969D 数据手册

 浏览型号JANS1N5969D的Datasheet PDF文件第2页浏览型号JANS1N5969D的Datasheet PDF文件第3页浏览型号JANS1N5969D的Datasheet PDF文件第4页 
1N4954 thru 1N4996, 1N5968 thru 1N5969, and  
1N6632 thru 1N6637  
VOIDLESS-HERMETICALLY-SEALED  
5 WATT GLASS ZENER DIODES  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
This Zener Voltage Regulator series is military qualified to MIL-PRF-  
19500/356 and is ideal for high-reliability applications where a failure  
cannot be tolerated. These industry-recognized 5 Watt Zener Voltage  
Regulators are hermetically sealed with voidless-glass construction using  
an internal metallurgical bond. It includes Zener selections from 3.3 to 390  
volts in standard 5% tolerances as well as tighter tolerances identified by  
different suffix letters on the part number. They are also available in  
surface-mount packages (see separate data sheet for 1N4954US thru  
1N4996US, 1N5968US thru 1N5969US, and 1N6632US thru 1N6637US).  
Microsemi also offers numerous other Zener products to meet higher and  
lower power ratings in both thru-hole and surface mount packages.  
“E” Package  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
Popular JEDEC registered series  
Voidless hermetically sealed glass package  
Extremely robust construction  
Triple-layer passivation  
Internal “Category I” Metallurgical bonds for 1N4954  
thru 1N4996, and “Category III” for 1N6632 thru  
1N6637 as well as 1N5968 thru 1N5959  
•
Regulates voltage over a broad operating current and  
temperature range  
•
•
Extensive selection from 3.3 to 390 V  
Standard voltage tolerances are plus/minus 5% with  
no suffix  
•
Tight tolerances available in plus or minus 2% or 1%  
with C or D suffix respectively  
Flexible axial-lead mounting terminals  
•
•
•
•
•
JAN, JANTX, JANTXV, and JANS available per MIL-  
PRF-19500/356  
Nonsensitive to ESD per MIL-STD-750 Method 1020  
Surface mount equivalents also available in a square  
end-cap MELF configuration with “US” suffix (see  
separate data sheet for 1N4954US thru 1N4996US,  
1N6632US thru 1N6637US and 1N5968US thru  
1N5969US  
Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
•
Operating Temperature: -65oC to +175oC.  
Storage Temperature: -65oC to +175oC.  
Power Dissipation: 5 Watts @ TA = 25oC  
•
CASE: Hermetically sealed voidless hard glass with  
Tungsten slugs  
•
TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)  
over Copper except for JANS with solid Silver (Ag) and  
no finish  
MARKING: Body painted and part number, etc.  
POLARITY: Cathode indicated by band  
Tape & Reel option: Standard per EIA-296  
Weight: 750 mg  
Thermal Resistance: 22oC/W junction to lead at 3/8  
inch (10 mm) from body for 1N4954 thru 1N4996 and  
30oC/W for 1N6632 thru 1N6637, 1N5968 thru  
1N5969  
•
•
•
•
•
•
Thermal Impedance at 10 ms: 1.8oC/W for 1N4954  
thru 1N4996, and 3.0oC/W for both the 1N6632 thru  
1N6637 & 1N5968 thru 1N5969  
Forward Voltage: 1.50 V at 1.0 A  
Copyright 2005  
Microsemi  
Page 1  
2-4-2005 REV C  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

中文翻译

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JANS1N5969DUS MICROSEMI

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JANS1N5969US MICROSEMI

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JANS1N6074 MICROSEMI

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JANS1N6075 MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS, A,
JANS1N6076 MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon, HERMETIC SEALED, GLASS, E, 2
JANS1N6077 MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS, E,
JANS1N6078 MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 6A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS, E,
JANS1N6079 MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 12A, Silicon, HERMETIC SEALED, GLASS, G, 2 PIN
JANS1N6080 MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 12A, Silicon, HERMETIC SEALED, GLASS, G, 2 PIN
JANS1N6081 MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 12A, Silicon, HERMETIC SEALED, GLASS, G, 2 PIN

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