JANS1N5969US

更新时间： 2024-11-23 23:16:15

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管齐纳二极管测试
页数	文件大小	规格书
4页	578K
描述
5 WATT GLASS ZENER DIODES

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

JANS1N5969US 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	O-LELF-R2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.26
Is Samacsys：	N	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	JESD-30 代码：	O-LELF-R2
JESD-609代码：	e0	元件数量：	1
端子数量：	2	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
极性：	UNIDIRECTIONAL	最大功率耗散：	5 W
认证状态：	Qualified	参考标准：	MIL-19500/356H
标称参考电压：	6.2 V	表面贴装：	YES
技术：	ZENER	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	WRAP AROUND	端子位置：	END
最大电压容差：	5%	工作测试电流：	220 mA
Base Number Matches：	1

JANS1N5969US 数据手册

1N4954 thru 1N4996, 1N5968 thru 1N5969, and

1N6632 thru 1N6637

VOIDLESS-HERMETICALLY-SEALED

5 WATT GLASS ZENER DIODES

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This Zener Voltage Regulator series is military qualified to MIL-PRF-

19500/356 and is ideal for high-reliability applications where a failure

cannot be tolerated. These industry-recognized 5 Watt Zener Voltage

Regulators are hermetically sealed with voidless-glass construction using

an internal metallurgical bond. It includes Zener selections from 3.3 to 390

volts in standard 5% tolerances as well as tighter tolerances identified by

different suffix letters on the part number. They are also available in

surface-mount packages (see separate data sheet for 1N4954US thru

1N4996US, 1N5968US thru 1N5969US, and 1N6632US thru 1N6637US).

Microsemi also offers numerous other Zener products to meet higher and

lower power ratings in both thru-hole and surface mount packages.

“E” Package

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Popular JEDEC registered series

Voidless hermetically sealed glass package

Extremely robust construction

Triple-layer passivation

Internal “Category I” Metallurgical bonds for 1N4954

thru 1N4996, and “Category III” for 1N6632 thru

1N6637 as well as 1N5968 thru 1N5959

•

Regulates voltage over a broad operating current and

temperature range

•

Extensive selection from 3.3 to 390 V

Standard voltage tolerances are plus/minus 5% with

no suffix

•

Tight tolerances available in plus or minus 2% or 1%

with C or D suffix respectively

Flexible axial-lead mounting terminals

•

JAN, JANTX, JANTXV, and JANS available per MIL-

PRF-19500/356

Nonsensitive to ESD per MIL-STD-750 Method 1020

Surface mount equivalents also available in a square

end-cap MELF configuration with “US” suffix (see

separate data sheet for 1N4954US thru 1N4996US,

1N6632US thru 1N6637US and 1N5968US thru

1N5969US

Inherently radiation hard as described in Microsemi

MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating Temperature: -65^oC to +175^oC.

Storage Temperature: -65^oC to +175^oC.

Power Dissipation: 5 Watts @ T_A= 25^oC

•

CASE: Hermetically sealed voidless hard glass with

Tungsten slugs

•

TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)

over Copper except for JANS with solid Silver (Ag) and

no finish

MARKING: Body painted and part number, etc.

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-296

Weight: 750 mg

Thermal Resistance: 22^oC/W junction to lead at 3/8

inch (10 mm) from body for 1N4954 thru 1N4996 and

30^oC/W for 1N6632 thru 1N6637, 1N5968 thru

1N5969

•

Thermal Impedance at 10 ms: 1.8^oC/W for 1N4954

thru 1N4996, and 3.0^oC/W for both the 1N6632 thru

1N6637 & 1N5968 thru 1N5969

Forward Voltage: 1.50 V at 1.0 A

Microsemi

Page 1

2-4-2005 REV C

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

JANS1N5969US 替代型号

型号	品牌	替代类型	描述	数据表
1N5969US	MICROSEMI	类似代替	5 WATT GLASS ZENER DIODES
JAN1N5969US	MICROSEMI	功能相似	5 WATT GLASS ZENER DIODES

与JANS1N5969US相关器件

型号	品牌	获取价格	描述	数据表
JANS1N6074	MICROSEMI	获取价格	暂无描述
JANS1N6075	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS, A,
JANS1N6076	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon, HERMETIC SEALED, GLASS, E, 2
JANS1N6077	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS, E,
JANS1N6078	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 6A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS, E,
JANS1N6079	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 12A, Silicon, HERMETIC SEALED, GLASS, G, 2 PIN
JANS1N6080	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 12A, Silicon, HERMETIC SEALED, GLASS, G, 2 PIN
JANS1N6081	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 12A, Silicon, HERMETIC SEALED, GLASS, G, 2 PIN
JANS1N6102AUS	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 1 Element, Silicon, MICRO
JANS1N6103	MICROSEMI	获取价格	BIDIRECTIONAL TRANSIENT SUPPRESSORS

与JANS1N5969US相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

37
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

29
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

57
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

JANS1N5969US

JANS1N5969US 技术参数

JANS1N5969US 数据手册

JANS1N5969US 替代型号

与JANS1N5969US相关器件

与JANS1N5969US相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANS1N5969US

JANS1N5969US 技术参数

JANS1N5969US 数据手册

JANS1N5969US 替代型号

与JANS1N5969US相关器件

与JANS1N5969US相关文章

您还可以找

您在本页遇到什么问题？