The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 31 November 2000.
INCH-POUND
MIL-PRF-19500/376E
31 August 2000
SUPERSEDING
MIL-PRF-19500/376D
21 August 1998
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors.
Four levels of product assurance is provided for each device type as specified in MIL-PRF-19500. Two levels of
product assurance are provided for die.
1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and
UB), and figures 4 and 5 (die).
1.3 Maximum ratings.
Types
PT
VCBO
VEBO
VCEO
IC
TJ and TSTG
RqJA
RqJC
TA = +25°C
mW
V dc
V dc
V dc
mA dc
°C
°C/W
°C/W
2N2484
2N2484UA
2N2484UB
500 (1)
650 (2)
500 (1)
60
60
60
6
6
6
60
60
60
50
50
50
-65 to +200
-65 to +200
-65 to +200
325
210
325
146
160
146
(1) Derate linearly at 3.08 mW/°C above TA = +37.5°C
(2) Derate linearly at 4.76 mW/°C above TA = +63.5°C.
1.4 Primary electrical characteristics.
hfe
Cobo
|hfe|2
VCE(sat) (1)
Limits
VCE = 5 V dc
IC = 1 mA dc
f = 1 kHz
IE = 0
VCB = 5 V dc
100 kHz £ f £ 1 MHz
IC = 1.0 mA dc
IB = 0.1 mA dc
IC = 500 mA dc
VCE = 5 V dc
f = 30 MHz
pF
V dc
0.3
Min
Max
250
900
2.0
7.0
5.0
(1) Pulsed (see 4.5.1).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.