型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN1N5712-1E3 | MICROSEMI |
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Schottky Barrier Diode Qualified per MIL-PRF-19500/444 | |
JAN1N5712UB | MICROSEMI |
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Rectifier Diode, Schottky, 1 Element, 0.075A, Silicon, LEADLESS, CERAMIC PACKAGE-3 | |
JAN1N5712UBCC | MICROSEMI |
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Rectifier Diode, Schottky, 2 Element, 0.075A, Silicon, LEADLESS, CERAMIC PACKAGE-3 | |
JAN1N5712UBD | MICROSEMI |
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Rectifier Diode, Schottky, 2 Element, 0.075A, Silicon, LEADLESS, CERAMIC PACKAGE-3 | |
JAN1N5712UR-1 | MICROSEMI |
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SCHOTTKY BARRIER DIODES | |
JAN1N5772 | MICROSEMI |
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Rectifier Diode, 16 Element, 0.3A, Silicon, TO-85, CERAMIC, FP-10 | |
JAN1N5774 | MICROSEMI |
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Rectifier Diode, 8 Element, 0.3A, Silicon, TO-86, CERAMIC, FP-14 | |
JAN1N5802 | MICROSEMI |
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MILITARY APPROVED, HIGH EFFICIENCY, 2.5 AMP AND 6.0 AMP | |
JAN1N5802 | SENSITRON |
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DESCRIPTION: 50 VOLT, AMP, 25 NS HERMETIC RECTIFIER IN A 106 PACKAGE. | |
JAN1N5802R | MICROSEMI |
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Rectifier Diode, 1 Element, Silicon, |