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JAN1N5712UR-1 PDF预览

JAN1N5712UR-1

更新时间： 2024-02-11 19:46:06
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管
页数 文件大小 规格书
2页 38K
描述
SCHOTTKY BARRIER DIODES

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中文翻译

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JAN1N5712UR-1 技术参数

生命周期：Active零件包装代码：DO-213AA
包装说明：O-LELF-R2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.70风险等级：5.35
Is Samacsys：N其他特性：METALLURGICALLY BONDED
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：DO-213AAJESD-30 代码：O-LELF-R2
元件数量：1端子数量：2
最大输出电流：0.075 A封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
认证状态：Qualified参考标准：MIL-19500/444H
表面贴装：YES端子形式：WRAP AROUND
端子位置：ENDBase Number Matches：1

JAN1N5712UR-1 数据手册

 浏览型号JAN1N5712UR-1的Datasheet PDF文件第2页 
1N5711UR-1  
1N5712UR-1  
1N6857UR-1  
1N6858UR-1  
CDLL2810  
CDLL5711  
CDLL5712  
CDLL6263  
CDLL6857  
CDLL6858  
• 1N5711UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS  
PER MIL-PRF-19500/444  
• 1N5712UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS  
PER MIL-PRF 19500/445  
• SCHOTTKY BARRIER DIODES  
• LEADLESS PACKAGE FOR SURFACE MOUNT  
• METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION  
MAXIMUM RATINGS  
Operating Temperature: -65°C to +150°C  
Storage Temperature: -65°C to +150°C  
Operating Current:  
5711 & 6263 TYPES  
2810, 5712 & 6858 Types :75mA dc @ T  
6857 Types  
:All Types: Derate to 0 (zero) mA dc @ +150°C  
:33mA dc @ T  
= +140°C  
= +130°C  
EC  
EC  
:150mA dc @ T  
= +110°C  
EC  
Derating:  
MILLIMETERS  
INCHES  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.  
DIM MIN MAX MIN MAX  
D
F
1.60  
0.41  
3.30  
1.70 0.063 0.067  
0.55 0.016 0.022  
3.70 .130 .146  
CDI  
TYPE  
MINIMUM  
BREAKDOWN  
VOLTAGE  
MAXIMUM  
FORWARD  
VOLTAGE  
MAXIMUM  
FORWARD  
VOLTAGE  
MAXIMUM REVERSE  
LEAKAGE CURRENT  
MAXIMUM  
CAPACITANCE @  
G
ESDS  
G1  
S
2.54 REF.  
0.03 MIN.  
.100 REF.  
.001 MIN.  
NUMBER  
V
= 0 VOLTS  
f = 1.0 MHZ  
CLASS  
R
VBR @ 10  
A
V
@ 1 mA  
V
I
1
@ V  
C
µ
F
F @ F  
R
R
T
FIGURE 1  
VOLTS  
70  
VOLTS  
0.41  
VOLTS@mA  
1.0 @ 15  
1.0@35  
NA  
200  
150  
150  
VOLTS  
50  
PICO FARADS  
1N5711UR-1  
1N5712UR-1  
1N6857UR-1  
2.0  
2.0  
4.5  
1
1
2
20  
0.41  
16  
DESIGN DATA  
20  
0.35  
0.75@ 35  
16  
1N6858UR-1  
70  
0.36  
0.65 @ 15  
200  
50  
4.5  
2
CASE: DO-213AA, Hermetically sealed  
CDLL2810  
CDLL5711  
CDLL5712  
CDLL6263  
CDLL6857  
CDLL6858  
20  
70  
20  
60  
20  
70  
0.41  
0.41  
0.41  
0.41  
0.35  
0.36  
1.0 @ 35  
1.0 @ 15  
1.0 @ 35  
1.0 @ 15  
0.75 @ 35  
0.65 @ 15  
100  
200  
150  
200  
150  
200  
15  
50  
16  
50  
16  
50  
2.0  
2.0  
2.0  
2.2  
4.5  
4.5  
1
1
1
1
2
2
glass case. (MELF, SOD-80, LL34)  
LEAD FINISH: Tin / Lead  
THERMAL RESISTANCE: (R  
):  
OJEC  
100 °C/W maximum at L = 0 inch  
THERMAL IMPEDANCE: (Z  
): 40  
OJX  
°C/W maximum  
NOTE:  
Effective Minority Carrier Lifetime (τ ) is 100 Pico Seconds  
POLARITY: Cathode end is banded.  
MOUNTING SURFACE SELECTION:  
The Axial Coefficient of Expansion  
(COE) Of this Device is Approximately  
+6PPM/°C. The COE of the Mounting  
Surface System Should Be Selected To  
Provide A Suitable Match With This  
Device.  
NOTICE: Qualification testing to J, JX, JV and JS levels for 6857 and 6858 types is underway. Contact the  
factory for qualification completion dates. These two part numbers are being introduced by CDI as  
“drop-in” replacements for the 5711 and 5712. They provide a more robust mechanical design and  
a higher ESDS class with the only trade-off being an increase in capacitance.  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
WEBSITE: http://www.microsemi.com  
FAX (978) 689-0803  
145  
12

中文翻译

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JAN1N5712UR-1 替代型号

型号 品牌 替代类型 描述 数据表
1N5712-1 MICROSEMI

完全替代

 SCHOTTKY BARRIER DIODES
JANTX1N5712UR-1 MICROSEMI

类似代替

 SCHOTTKY BARRIER DIODES
DSB5712 MICROSEMI

功能相似

 SCHOTTKY BARRIER DIODES

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