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DSB5712 PDF预览

DSB5712

更新时间: 2024-11-25 03:30:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
2页 36K
描述
SCHOTTKY BARRIER DIODES

DSB5712 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:O-LALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.54
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-35
JESD-30 代码:O-LALF-W2JESD-609代码:e0
元件数量:1端子数量:2
最大输出电流:0.075 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
表面贴装:NO技术:SCHOTTKY
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DSB5712 数据手册

 浏览型号DSB5712的Datasheet PDF文件第2页 
1N5711  
1N5711-1  
1N5712-1  
1N6857-1  
1N6858-1  
DSB2810  
DSB5712  
• 1N5711-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS  
PER MIL-PRF-19500/444  
• 1N5712-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS  
PER MIL-PRF-19500/444  
• SCHOTTKY BARRIER DIODES  
• HERMETICALLY SEALED  
• METALLURGICALLY BONDED  
MAXIMUM RATINGS  
Operating Temperature: -65°C to +150°C  
Storage Temperature: -65°C to +150°C  
Operating Current: 5711 types  
2810,5712 & 6858 types :75mA dc@ T  
:33mA dc@ T  
L = +130°C, L = 3/8”  
L = +110°C, L = 3/8”  
:75mA dc@ T  
L = +70°C, L = 3/8”  
6857 TYPE  
all types:  
Derating:  
Derate to 0 (zero)mA@+150°C  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.  
CDI  
TYPE  
MINIMUM  
BREAKDOWN  
VOLTAGE  
MAXIMUM  
FORWARD  
VOLTAGE  
MAXIMUM  
FORWARD  
VOLTAGE  
MAXIMUM REVERSE  
LEAKAGE CURRENT  
MAXIMUM  
ESDS  
CAPACITANCE @ CLASS  
NUMBER  
V
= 0 VOLTS  
f = 1.0 MHZ  
R
VBR @ 10  
A
V
@ 1 mA  
V
@ I  
I
@ V  
C
µ
F
F
F
R
R
T
VOLTS  
20  
VOLTS  
MILLIAMPS  
nA  
100  
200  
150  
150  
150  
200  
VOLTS  
PICO FARADS  
DSB2810  
1N5711,-1  
DSB5712  
1N5712-1  
1N6857-1  
1N6858-1  
0.41  
1.0@35  
15  
2.0  
2.0  
2.0  
2.0  
4.5  
4.5  
1
1
1
1
2
2
FIGURE 1  
70  
0.41  
1.0@15  
50  
20  
0.41  
1.0@35  
16  
20  
0.41  
1.0@35  
16  
20  
0.35  
0.75@35  
0.65@15  
16  
DESIGN DATA  
70  
0.36  
50  
CASE: Hermetically sealed glass case  
per MIL-PRF-19500/444 and /445  
DO-35 Outline  
NOTE: Effective Minority Carrier Lifetime (τ ) is 100 Pico Seconds  
LEAD MATERIAL: Copper clad steel.  
LEAD FINISH: Tin / Lead  
THERMAL RESISTANCE: (R  
): 250  
OJEC  
°C/W maximum at L = .375 inch  
THERMAL IMPEDANCE: (Z  
°C/W maximum  
): 40  
OJX  
NOTICE: Qualification testing to M, JX, and JS levels for 6857 and 6858 types is underway.  
Contact the factory for qualification completion dates. These two part numbers are  
being introduced by CDI as “drop-in” replacements for the 5711 and 5712. They  
provide a more robust mechanical design and a higher ESDS class with the only  
trade-off being an increase in capacitance.  
POLARITY: Cathode end is banded.  
MOUNTING POSITION: Any.  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
FAX (978) 689-0803  
WEBSITE: http://www.microsemi.com  
63  

DSB5712 替代型号

型号 品牌 替代类型 描述 数据表
1N5712 MICROSEMI

完全替代

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT
1N5712UR-1 MICROSEMI

完全替代

SCHOTTKY BARRIER DIODES

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