Datasheet > IXTA3N120-TRR

IXTA3N120-TRR

更新时间： 2024-11-24 21:15:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	168K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXTA3N120-TRR 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.69
Base Number Matches：	1

IXTA3N120-TRR 数据手册

High Voltage

Power MOSFET

V_DSS= 1200V

I_D25= 3A

R_DS(on) 4.5

IXTA3N120

IXTP3N120

IXTH3N120

N-Channel Enhancement Mode

Avalanche Rated

TO-263 AA (IXTA)

Fast Intrinsic Diode

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

TO-220AB (IXTP)

T_J= 25C to 150C

1200

V_DGR

T_J= 25C to 150C, R_GS= 1M

V_GSS

V_GSM

Continuous

Transient

20

30

D (Tab)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

TO-247 (IXTH)

I_A

T_C= 25C

E_AS

700

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150C

T_C= 25C

V/ns

200

D (Tab)

T_J

-55 ... +150

150

C

G = Gate

S = Source

= Drain

T_JM

T_stg

Tab = Drain

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Features

F_C

M_d

Mounting Force (TO-263)

Mounting Torque (TO-247 & TO-220)

10..65 / 2.2..14.6

N/lb

Nm/lb.in



International Standard Packages

High Voltage Package

Fast Intrinsic Diode

1.13 / 10



Weight

TO-263

TO-220

TO-247

2.5

3.0

6.0

Avalanche Rated

Molding Epoxies meet UL 94 V-0

Flammability Classification

High Blocking Voltage



Symbol

Test Conditions

Characteristic Values

Advantages

(T_J= 25C, Unless Otherwise Specified)

Min.

1200

2.5

Typ.

Max.



Easy to Mount

Space Savings

High Power Density

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 250A

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V



5.0

100 nA

Applications

I_DSS

25 A

1 mA

T_J= 125C



High Voltage Power Supplies

Capacitor Discharge Applications

Pulse Circuits



R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

4.5





DS98844F(0515)

12 3 4 5

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