Datasheet > IXTA220N04T2

IXTA220N04T2

更新时间： 2024-01-08 05:06:20

品牌	Logo	应用领域
IXYS		转换器
页数	文件大小	规格书
11页	200K
描述
DC to DC Synchronous Converter Design

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IXTA220N04T2 技术参数

DC to DC Synchronous Converter Design

Abdus Sattar, IXYS Corporation

IXAN0068

In Figure 1, the Q1 is called the high-side or control FET and Q2 is called the

low-side or sync FET applied in a step-down DC to DC synchronous converter

application. The ratio Vo /Vin is controlled by the duty cycle of Q1. To improve the

efficiency, it’s desirable to have Q2 turned ON when Q1 is turned OFF. A simplified

switch state diagram is shown in Figure 2 [2]. It depicts the switching sequence as A-B-

C-B-A where the state B called “dead time” when both Q1 and Q2 are OFF and the

Schottky diode, D1 is ON to provide the freewheeling operation in the inductive load

circuit. It’s desirable to reduce the dead time to a minimum to improve the efficiency.

However, if the dead time is lower than the turn-on or turn-off times of Q1 and Q2, the

circuit may go into state D, the shoot-through state when both Q1 and Q2 are ON at the

same time causing a short-circuit in the input voltage source, Vin. The state D is

undesirable since it would destroy transistors Q1 and Q2.

Figure 2: Circuit Switch State Diagram [2]

123 4 5 6 7...11

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型号	品牌	替代类型	描述	数据表
IXTP220N04T2	LITTELFUSE	功能相似	这些器件具有40V至170V的漏极 - 源极电压额定值，并可提供高达600安培的高电流性能
IXTA220N04T2-7	IXYS	功能相似	Power Field-Effect Transistor, 220A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, M
IXTP220N04T2	IXYS	功能相似	DC to DC Synchronous Converter Design

型号	品牌	获取价格	描述	数据表
IXTA220N04T2-7	IXYS	获取价格	Power Field-Effect Transistor, 220A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, M
IXTA220N04T2-7	LITTELFUSE	获取价格	这些器件具有40V至170V的漏极 - 源极电压额定值，并可提供高达600安培的高电流性能
IXTA220N04T2-TRL	IXYS	获取价格	Power Field-Effect Transistor,
IXTA220N055T	IXYS	获取价格	Preliminary Technical Information TrenchMVTM Power MOSFET
IXTA220N075T7	IXYS	获取价格	MOSFET N-CH 75V 220A TO-263-7
IXTA230N04T4	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTA230N075T2	IXYS	获取价格	N-Channel Enhancement Mode Avalanche Rated
IXTA230N075T2	LITTELFUSE	获取价格	这些器件具有40V至170V的漏极 - 源极电压额定值，并可提供高达600安培的高电流性能
IXTA230N075T2-7	IXYS	获取价格	Power Field-Effect Transistor, 230A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, M
IXTA230N075T2-7	LITTELFUSE	获取价格	Power Field-Effect Transistor,