IXFH60N20

更新时间： 2024-11-18 11:14:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	94K
描述
HiPerFET Power MOSFETs

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中文翻译

获取价格

数据手册

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IXFH60N20 数据手册

ADVANCE TECHNICAL INFORMATION

HiPerFET^TM

Power MOSFETs

V_DSS= 200 V

I_D25= 60 A

R_DS(on)= 33 mΩ

IXFH 60N20

IXFT 60N20

N-ChannelEnhancementMode

AvalancheRated,Highdv/dt

t ≤ 250 ns

Symbol

TestConditions

Maximum Ratings

TO-247AD(IXFH)

V_DSS

V_DGR

V_GS

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

Continuous

200

±20

±30

(TAB)

V_GSM

I_D25

Transient

T_C= 25°C

I_DM

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

240

2.5

I_AR

TO-268 ( IXFT) Case Style

E_AR

E_AS

dv/dt

T_C= 25°C

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

(TAB)

P_D

T_J

T_C= 25°C

300

-55 to +150

150

°C

G = Gate

S = Source TAB = Drain

= Drain

T_JM

T_stg

-55 to +150

T_L

1.6 mm (0.063 in) from case for 10 s

Mounting torque

300

°C

M_d

1.13/10 Nm/lb.in.

Features

Weight

TO-247

TO-268

International standard packages

Low R_{DS (on)}

Rated for unclamped Inductive load

switching (UIS)

Molding epoxies meet UL 94 V-0

flammability classification

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min.

typ.

max.

Advantages

V_DSS

V_GS= 0 V, I_D= 250µA

200

2.0

Easy to mount

Space savings

V_GS(th)

V_DS= V_GS, I_D= 4 mA

4.0

High power density

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

µA

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

33 mΩ

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

98845 (6/01)

中文翻译

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