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IXFH60N20F PDF预览

IXFH60N20F

更新时间: 2024-02-07 06:40:45
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
2页 106K
描述
HiPerRFTM Power MOSFETs

IXFH60N20F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-247包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.81
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):60 A
最大漏极电流 (ID):60 A最大漏源导通电阻:0.038 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):315 W
最大脉冲漏极电流 (IDM):240 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFH60N20F 数据手册

 浏览型号IXFH60N20F的Datasheet PDF文件第2页 
Advance Technical Information  
HiPerRFTM  
Power MOSFETs  
F-Class: MegaHertz Switching  
IXFH 60N20F VDSS  
IXFT 60N20F ID25  
RDS(on)  
= 200V  
= 60A  
=
38mΩ  
t 200 ns  
rr  
N-ChannelEnhancementMode  
Avalanche Rated, Low Qg, Low Intrinsic Rg  
High dV/dt, Low trr  
TO-247AD(IXFH)  
Symbol  
TestConditions  
Maximum Ratings  
(TAB)  
VDSS  
VDGR  
T
T
= 25°C to 150°C  
= 25°C to 150°C; R = 1 MΩ  
200  
200  
V
V
J
J
GS  
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
TO-268 (IXFT) Case Style  
ID25  
IDM  
IAR  
T
= 25°C  
60  
240  
60  
A
A
A
C
T
= 25°C, pulse width limited by T  
= 25°C  
C
JM  
T
C
G
(TAB)  
=
S
EAR  
EAS  
T
= 25°C  
= 25°C  
35  
1.5  
mJ  
J
C
T
C
G
S
=
Gate,D  
Source,TAB  
Drain,  
Drain  
dv/dt  
I
I , di/dt 100 A/µs, V V  
10  
V/ns  
S
DM  
DD  
DSS  
=
=
T
150°C, R = 2 Ω  
J
G
PD  
TJ  
T
= 25°C  
315  
W
C
Features  
-55 ... +150  
°C  
l
RF capable MOSFETs  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
l
l
l
l
Double metal process for low gate  
resistance  
UnclampedInductiveSwitching(UIS)  
rated  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
Md  
Mountingtorque  
TO-247  
1.13/10 Nm/lb.in.  
Low package inductance  
- easy to drive and to protect  
Fast intrinsic rectifier  
Weight  
TO-247  
TO-268  
6
4
g
g
Applications  
l
Symbol  
VDSS  
TestConditions  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
DC-DC converters  
l
Switched-mode and resonant-mode  
power supplies, >500kHz switching  
J
min. typ. max.  
l
DC choppers  
VGS = 0 V, ID = 1mA  
VDS = VGS, ID = 4mA  
200  
2.0  
V
l
13.5 MHz industrial applications  
l
VGS(th)  
IGSS  
4.0 V  
Pulse generation  
l
V
= ±20 V, V = 0  
±100 nA  
Laser drivers  
GS  
DS  
l
RF amplifiers  
IDSS  
V
V
= V  
= 0 V  
50 µA  
1.5 mA  
DS  
DSS  
Advantages  
T
= 125°C  
GS  
J
l
RDS(on)  
V
Note 1  
= 10 V, I = 0.5 I  
38 mΩ  
Space savings  
GS  
D
D25  
l
High power density  
98885 (1/02)  
© 2002 IXYS All rights reserved  

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