Datasheet > IXFH60N60X

IXFH60N60X

更新时间： 2024-11-18 21:13:19

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	222K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXFH60N60X 技术参数

生命周期：	Not Recommended	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.7
Base Number Matches：	1

IXFH60N60X 数据手册

Preliminary Technical Information

X-Class HiPerFET^TM

Power MOSFET

V_DSS= 600V

I_D25= 60A

R_DS(on) 55m

IXFQ60N60X

IXFH60N60X

N-Channel Enhancement Mode

Avalanche Rated

TO-3P (IXFQ)

Fast Intrinsic Diode

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

600

TO-247 (IXFH)

V_DGR

T_J= 25C to 150C, R_GS= 1M

V_GSS

V_GSM

Continuous

Transient

30

40

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

D (Tab)

D = Drain

120

I_A

T_C= 25C

G = Gate

S = Source

E_AS

2.5

Tab = Drain

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150°C

T_C= 25C

V/ns

890

T_J

-55 ... +150

150

C

Features

T_JM

T_stg

-55 ... +150



International Standard Packages

Low R_DS(ON)and Q_G

Avalanche Rated

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Low Package Inductance

M_d

Mounting Torque

1.13 / 10

Nm/lb.in

Weight

TO-3P

TO-247

5.5

6.0

Advantages



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 8mA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

600



2.5

4.5

Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

100 nA



I_DSS

25 A

1.25 mA



T_J= 125C



Robotics and Servo Controls

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

55 m

DS100656A(5/15)

12 3 4 5 6

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