Datasheet > IXFH48N60X3

IXFH48N60X3

更新时间： 2024-01-22 18:18:50

品牌	Logo	应用领域
力特 - LITTELFUSE		栅栅极
页数	文件大小	规格书
7页	621K
描述
600V X3-Class超级结MOSFET IXFH48N60X3的标称额定电流为48A，提供TO-247封装。这些功率MOSFET具有显著降低的通道电阻RDS(on)和栅极电荷Qg。其具有最

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IXFH48N60X3 数据手册

IXFH48N60X3

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max

g_fs

V_DS= 10V, I_D= 0.5 • I_D25, Note 1

Gate Input Resistance

R_Gi

3.6



C_iss

C_oss

C_rss

2730

4660

V_GS= 0V, V_DS= 25V, f = 1MHz

Effective Output Capacitance

C_o(er)

C_o(tr)

135

680

Energy related

Time related

V_GS= 0V

V_DS= 0.8 • V_DSS

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

R_G= 3 (External)

Q_g(on)

Q_gs

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

Q_gd

R_thJC

R_thCS

0.24 C/W

C/W

0.21

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max

I_S

V_GS= 0V

I_SM

V_SD

Repetitive, Pulse Width Limited by T_JM

I_F= I_S, V_GS= 0V, Note 1

192

1.4

t_rr

Q_RM

I_RM

163

2.3

28.6

µC

I_F= 24A, -di/dt = 200A/µs

V_R= 100V

Note 1. Pulse test, t  300s, duty cycle, d 2%.

Littelfuse reserves the right to change limits, test conditions and dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,860,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123B1

6,306,728B1

6,404,065B1

6,534,343

6,583,505

6,683,344

6,710,405B2 6,759,692

6,710,463

6,727,585

7,005,734B2 7,157,338B2

7,063,975B2

6,771,478B2 7,071,537

123 4 5 6 7

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