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IXFH58N20 PDF预览

IXFH58N20

更新时间: 2024-11-19 14:56:59
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 698K
描述
功能与特色: 应用: 优点:

IXFH58N20 数据手册

 浏览型号IXFH58N20的Datasheet PDF文件第2页浏览型号IXFH58N20的Datasheet PDF文件第3页浏览型号IXFH58N20的Datasheet PDF文件第4页浏览型号IXFH58N20的Datasheet PDF文件第5页 
HiPerFETTM  
VDSS  
ID25 RDS(on)  
Power MOSFETs  
200V 42 A 60mW  
200V 50 A 45mW  
200V 58 A 40mW  
IXFH/IXFM42N20  
IXFH/IXFM/IXFT50N20  
IXFH/IXFT58N20  
N-Channel Enhancement Mode  
High dv/dt, Low trr, HDMOSTM Family  
Obsolete:  
trr £ 200 ns  
IXFM42N20  
TO-247AD(IXFH)  
IXFM50N20  
(TAB)  
Symbol  
TestConditions  
MaximumRatings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
200  
200  
V
V
TO-268(D3)CaseStyle  
TJ = 25°C to 150°C; RGS = 1 MW  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
G
S
ID25  
IDM  
IAR  
TC = 25°C  
42N20  
50N20  
58N20  
42N20  
50N20  
58N20  
42N20  
50N20  
58N20  
42  
50  
58  
168  
200  
232  
42  
A
A
A
A
A
A
A
A
A
(TAB)  
TO-204 AE (IXFM)  
Package  
unavailable  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
S
50  
58  
G
D
G = Gate,  
S = Source,  
D = Drain,  
TAB = Drain  
EAR  
TC = 25°C  
30  
5
mJ  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
V/ns  
Features  
PD  
TC = 25°C  
300  
W
• Internationalstandardpackages  
• Low RDS (on) HDMOSTM process  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
• Ruggedpolysilicongatecellstructure  
• UnclampedInductiveSwitching(UIS)  
rated  
• Lowpackageinductance  
- easy to drive and to protect  
• FastintrinsicRectifier  
TJM  
Tstg  
-55 ... +150  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mountingtorque  
300  
°C  
Md  
1.13/10 Nm/lb.in.  
Weight  
TO-204 = 18 g, TO-247 = 6 g  
Applications  
• DC-DC converters  
• Synchronousrectification  
• Batterychargers  
• Switched-modeandresonant-mode  
powersupplies  
• DC choppers  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• ACmotorcontrol  
• Temperatureandlightingcontrols  
• Lowvoltagerelays  
VDSS  
VGS = 0 V, ID = 250 mA  
200  
2
V
V
VGS(th)  
VDS = VGS, ID = 4 mA  
4
Advantages  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100 nA  
200 mA  
• Easy to mount with 1 screw (TO-247)  
(isolatedmountingscrewhole)  
• Highpowersurfacemountablepackage  
• Highpowerdensity  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
1
mA  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
91522H(2/98)  
1 - 4  

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