HiPerFETTM
VDSS
ID25 RDS(on)
Power MOSFETs
200V 42 A 60mW
200V 50 A 45mW
200V 58 A 40mW
IXFH/IXFM42N20
IXFH/IXFM/IXFT50N20
IXFH/IXFT58N20
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
Obsolete:
trr £ 200 ns
IXFM42N20
TO-247AD(IXFH)
IXFM50N20
(TAB)
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
200
200
V
V
TO-268(D3)CaseStyle
TJ = 25°C to 150°C; RGS = 1 MW
VGS
Continuous
Transient
±20
±30
V
V
VGSM
G
S
ID25
IDM
IAR
TC = 25°C
42N20
50N20
58N20
42N20
50N20
58N20
42N20
50N20
58N20
42
50
58
168
200
232
42
A
A
A
A
A
A
A
A
A
(TAB)
TO-204 AE (IXFM)
Package
unavailable
TC = 25°C, pulse width limited by TJM
TC = 25°C
S
50
58
G
D
G = Gate,
S = Source,
D = Drain,
TAB = Drain
EAR
TC = 25°C
30
5
mJ
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
Features
PD
TC = 25°C
300
W
• Internationalstandardpackages
• Low RDS (on) HDMOSTM process
TJ
-55 ... +150
150
°C
°C
°C
• Ruggedpolysilicongatecellstructure
• UnclampedInductiveSwitching(UIS)
rated
• Lowpackageinductance
- easy to drive and to protect
• FastintrinsicRectifier
TJM
Tstg
-55 ... +150
TL
1.6 mm (0.062 in.) from case for 10 s
Mountingtorque
300
°C
Md
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Applications
• DC-DC converters
• Synchronousrectification
• Batterychargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• ACmotorcontrol
• Temperatureandlightingcontrols
• Lowvoltagerelays
VDSS
VGS = 0 V, ID = 250 mA
200
2
V
V
VGS(th)
VDS = VGS, ID = 4 mA
4
Advantages
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
200 mA
• Easy to mount with 1 screw (TO-247)
(isolatedmountingscrewhole)
• Highpowersurfacemountablepackage
• Highpowerdensity
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
1
mA
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91522H(2/98)
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