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IXFH52N30P PDF预览

IXFH52N30P

更新时间: 2024-11-19 14:56:39
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 215K
描述
功能与特色: 优点: 应用:

IXFH52N30P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.69其他特性:AVALANCHE RATED
雪崩能效等级(Eas):1000 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:300 V
最大漏极电流 (Abs) (ID):52 A最大漏极电流 (ID):52 A
最大漏源导通电阻:0.066 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):400 W最大脉冲漏极电流 (IDM):150 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFH52N30P 数据手册

 浏览型号IXFH52N30P的Datasheet PDF文件第2页浏览型号IXFH52N30P的Datasheet PDF文件第3页浏览型号IXFH52N30P的Datasheet PDF文件第4页浏览型号IXFH52N30P的Datasheet PDF文件第5页浏览型号IXFH52N30P的Datasheet PDF文件第6页 
PolarTM Power MOSFETs  
HiPerFETTM  
VDSS = 300V  
ID25 = 52A  
RDS(on) 73m  
200ns  
IXFV52N30P  
IXFV52N30PS  
IXFH52N30P  
trr  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
PLUS220 (IXFV)  
G
D
S
Symbol  
Test Conditions  
Maximum Ratings  
D (Tab)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1M  
300  
300  
V
V
PLUS220SMD (IXFV_S)  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
52  
150  
A
A
G
S
D (Tab)  
IA  
EAS  
TC = 25°C  
TC = 25°C  
52  
1
A
J
TO-247 (IXFH)  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
10  
V/ns  
W
TC = 25°C  
400  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G
D
D (Tab)  
S
G = Gate  
S = Source  
D
= Drain  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Tab = Drain  
Md  
Mounting Torque (TO-247)  
Mounting Force (PLUS220)  
1.13/10  
Nm/lb.in  
N/lb  
Features  
FC  
11..65/2.5..14.6  
Fast Intrinsic Rectifier  
Avalanche Rated  
Low RDS(ON) and QG  
Weight  
PLUS220 & PLUS220SMD  
TO-247  
4
6
g
g
Low Package Inductance  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
High Power Density  
Easy to Mount  
Space Savings  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
300  
2.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 4mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
5.0  
Applications  
 100 nA  
IDSS  
25 A  
Switch-Mode and Resonant-Mode  
TJ = 125C  
1 mA  
Power Supplies  
DC-DC Converters  
Laser Drivers  
AC and DC Motor Drives  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
73 m  
Robotics and Servo Controls  
DS99197G(10/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  

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TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 58A I(D) | TO-247VAR