Datasheet > IXFH52N30P

IXFH52N30P

更新时间： 2024-01-31 15:02:12

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	215K
描述
功能与特色: 优点: 应用:

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中文翻译

获取价格

数据手册

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IXFH52N30P 数据手册

Polar^TMPower MOSFETs

HiPerFET^TM

V_DSS= 300V

I_D25= 52A

R_DS(on) 73m

 200ns

IXFV52N30P

IXFV52N30PS

IXFH52N30P

t_rr

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

PLUS220 (IXFV)

Symbol

Test Conditions

Maximum Ratings

D (Tab)

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1M

300

PLUS220SMD (IXFV_S)

V_GSS

V_GSM

Continuous

Transient

± 20

± 30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

150

D (Tab)

I_A

E_AS

T_C= 25°C

TO-247 (IXFH)

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150°C

V/ns

T_C= 25°C

400

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

D (Tab)

G = Gate

S = Source

= Drain

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

Tab = Drain

M_d

Mounting Torque (TO-247)

Mounting Force (PLUS220)

1.13/10

Nm/lb.in

N/lb

Features

F_C

11..65/2.5..14.6



Fast Intrinsic Rectifier

Avalanche Rated

Low R_DS(ON)and Q_G

Weight

PLUS220 & PLUS220SMD

TO-247



Low Package Inductance

Advantages

Symbol

Test Conditions

Characteristic Values



High Power Density

Easy to Mount

Space Savings

(T_J= 25C, Unless Otherwise Specified)

Min.

300

2.5

Typ.

Max.



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 4mA

V_GS=  20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

5.0

Applications

 100 nA



I_DSS

25 A

Switch-Mode and Resonant-Mode

T_J= 125C

1 mA

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives



R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

73 m



Robotics and Servo Controls

DS99197G(10/13)

12 3 4 5 6

中文翻译

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