Datasheet > IXFH12N50F

IXFH12N50F

更新时间： 2024-01-23 01:01:29

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	304K
描述
HiPerRF Power MOSFETs F-Class: MegaHertz Switching

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXFH12N50F 数据手册

IXFH 12N50F

IXFT 12N50F

Symbol

g_fs

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

TO-247 AD Outline

V_DS= 10 V; I_D= 0.5 • I_D25

Note 1

C_iss

C_oss

C_rss

1870

290

Terminals:

1 - Gate

2 - Drain

3 - Source

Tab - Drain

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10 V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

R_G= 4.7 W (External),

Dim.

Millimeter

Inches

Min. Max.

Min.

Max.

A₁

A₂

4.7

2.2

5.3

2.54

2.6

.185 .209

.087 .102

.059 .098

Q_g(on)

Q_gs

V_GS= 10 V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

b₁

b₂

1.0

1.65

2.87

1.4

2.13

3.12

.040 .055

.065 .084

.113 .123

Q_gd

R_thJC

R_thCK

0.65 K/W

K/W

.016 .031

.819 .845

.610 .640

20.80 21.46

15.75 16.26

(TO-247)

0.25

5.20

5.72 0.205 0.225

19.81 20.32

4.50

.780 .800

.177

Source-DrainDiode

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

ÆP 3.55

3.65

.140 .144

5.89

6.40 0.232 0.252

4.32

6.15 BSC

5.49

.170 .216

242 BSC

Symbol

TestConditions

I_S

V_GS= 0 V

TO-268 Outline

I_SM

Repetitive;

pulse width limited by T_JM

V_SD

I_F= I_S, V_GS= 0 V, Note 1

1.5

t_rr

250 ns

I_F= I_S,-di/dt = 100 A/ms, V_R= 100 V

Q_RM

I_RM

0.8

6.5

Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A₁

A₂

4.9

2.7

.02

5.1

2.9

.25

.193 .201

.106 .114

.001 .010

Min Recommended Footprint

b₂

1.15

1.9

1.45

2.1

.65

.045 .057

.75

.83

.016 .026

E₁

13.80 14.00

15.85 16.05

.543 .551

.624 .632

.524 .535

13.3

13.6

5.45 BSC

18.70 19.10

.215 BSC

.736 .752

.094 .106

2.40

2.70

1.20

1.40

.047 .055

1.00

0.25 BSC

3.80 4.10

1.15

.039 .045

.010 BSC

.150 .161

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106

4,850,072 4,931,844

5,017,508

5,034,796

5,049,961 5,187,117 5,486,715

5,063,307 5,237,481 5,381,025

下载PDF

与IXFH12N50F相关器件

型号	品牌	描述	获取价格	数据表
IXFH12N65X2	LITTELFUSE	这些新型器件采用电荷补偿原理和专有工艺技术开发，具有最低的导通电阻，以及低栅极电荷和卓越的	获取价格
IXFH12N80P	IXYS	PolarHV HiPerFET Power MOSFET	获取价格
IXFH12N80P	LITTELFUSE	功能与特色: 优点: 应用:	获取价格
IXFH12N90	IXYS	HIPERFET Power MOSFTETs	获取价格
IXFH12N90	LITTELFUSE	功能与特色: 应用: 优点:	获取价格
IXFH12N90P	IXYS	Polar Power MOSFET HiPerFET	获取价格