5秒后页面跳转
IXFA4N85X PDF预览

IXFA4N85X

更新时间: 2024-02-18 13:14:31
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 248K
描述
Power Field-Effect Transistor,

IXFA4N85X 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.74
Base Number Matches:1

IXFA4N85X 数据手册

 浏览型号IXFA4N85X的Datasheet PDF文件第1页浏览型号IXFA4N85X的Datasheet PDF文件第2页浏览型号IXFA4N85X的Datasheet PDF文件第4页浏览型号IXFA4N85X的Datasheet PDF文件第5页 
IXFY4N85X IXFA4N85X  
IXFP4N85X  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
6
5
4
3
2
1
0
V
= 10V  
V
= 10V  
GS  
GS  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
6V  
0
1
2
3
4
5
6
7
8
9
10  
11  
0
4
8
12  
16  
20  
24  
28  
32  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 2A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
9V  
GS  
V
= 10V  
GS  
8V  
7V  
I
= 4A  
D
I
= 2A  
D
6V  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 2A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
GS  
T = 125ºC  
J
T = 25ºC  
J
0
1
2
3
4
5
6
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
ID - Amperes  
© 2016 IXYS CORPORATION, All Rights Reserved  

与IXFA4N85X相关器件

型号 品牌 描述 获取价格 数据表
IXFA50N20X3 LITTELFUSE 超级结MOSFET采用电荷补偿原理和专有工艺技术开发,可提供出类拔萃的质量因数(导通电阻乘

获取价格

IXFA56N30X3 LITTELFUSE 超级结MOSFET采用电荷补偿原理和专有工艺技术开发,可提供出类拔萃的质量因数(导通电阻乘

获取价格

IXFA5N100P IXYS Polar Power MOSFET HiPerFET

获取价格

IXFA5N100P LITTELFUSE 功能与特色: 优点: 应用:

获取价格

IXFA5N50P3 IXYS Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

获取价格

IXFA5N50P3 LITTELFUSE Power Field-Effect Transistor,

获取价格