Datasheet > IS61SP12832-150TQI

IS61SP12832-150TQI

更新时间： 2024-09-15 23:59:47

品牌	Logo	应用领域
其他 - ETC		内存集成电路静态存储器时钟
页数	文件大小	规格书
15页	126K
描述
x32 Fast Synchronous SRAM

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IS61SP12832

IS61SP12836

128K x 32, 128K x 36 SYNCHRONOUS

PIPELINED STATIC RAM

ISSI

APRIL 2001

FEATURES

DESCRIPTION

The ISSI IS61SP12832 and IS61SP12836 is a high-speed

synchronous static RAM designed to provide a burstable,

high-performance memory for high speed networking and

communication applications. It is organized as 131,072

words by 32 bits and 36 bits, fabricated with ISSI's ad-

vanced CMOS technology. The device integrates a 2-bit

burst counter, high-speed SRAM core, and high-drive

capability outputs into a single monolithic circuit. All syn-

chronous inputs pass through registers controlled by a

positive-edge-triggered single clock input.

• Internal self-timed write cycle

• Individual Byte Write Control and Global Write

• Clock controlled, registered address, data and

control

• Pentium™ or linear burst sequence control using

MODE input

• Three chip enables for simple depth expansion

and address pipelining

• Common data inputs and data outputs

Write cycles are internally self-timed and are initiated by

the rising edge of the clock input. Write cycles can be from

one to four bytes wide as controlled by the write control

inputs.

• JEDEC 100-Pin TQFP and

119-pin PBGA package

• Single +3.3V, +10%, –5% power supply

• Power-down snooze mode

Separate byte enables allow individual bytes to be written.

BW1 controls DQa, BW2 controls DQb, BW3 controls

DQc, BW4 controls DQd, conditioned by BWE being

LOW. A LOW on GW input would cause all bytes to be

written.

Bursts can be initiated with either ADSP (Address Status

Processor) or ADSC (Address Status Cache Controller)

input pins. Subsequent burst addresses can be generated

internally and controlled by the ADV (burst address

advance) input pin.

The mode pin is used to select the burst sequence order,

Linear burst is achieved when this pin is tied LOW.

Interleave burst is achieved when this pin is tied HIGH or

left floating.

FAST ACCESS TIME

Symbol

tKQ

Parameter

-200

3.1

-166

3.5

-150

3.8

-133

-5

Units

Clock Access Time

Cycle Time

tKC

6.7

7.5

133

100

Frequency

200

166

150

MHz

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

04/17/01

12 3 4 5 6 7...15

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与IS61SP12832-150TQI相关器件

型号	品牌	获取价格	描述	数据表
IS61SP12832-166B	ICSI	获取价格	Standard SRAM, 128KX32, 3.5ns, CMOS, PQFP100,
IS61SP12832-166TQ	ETC	获取价格	128K x 32 SYNCHRONOUS PIPELINED STATIC RAM
IS61SP12832-166TQI	ISSI	获取价格	Cache SRAM, 128KX32, 3.5ns, CMOS, PQFP100, TQFP-100
IS61SP12832-200TQ	ISSI	获取价格	Cache SRAM, 128KX32, 3.1ns, CMOS, PQFP100, TQFP-100
IS61SP12832-5B	ETC	获取价格	128K x 32 SYNCHRONOUS PIPELINED STATIC RAM
IS61SP12832-5TQ	ETC	获取价格	128K x 32 SYNCHRONOUS PIPELINED STATIC RAM
IS61SP12832-5TQI	ETC	获取价格	x32 Fast Synchronous SRAM
IS61SP12836	ICSI	获取价格	128K x 36 SYNCHRONOUS PIPELINED STATIC RAM
IS61SP12836-117B	ICSI	获取价格	128K x 36 SYNCHRONOUS PIPELINED STATIC RAM
IS61SP12836-117TQ	ICSI	获取价格	128K x 36 SYNCHRONOUS PIPELINED STATIC RAM

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