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IS61SP12836-150TQ

更新时间： 2024-11-19 04:44:47
品牌 Logo 应用领域
矽成 - ICSI 存储内存集成电路静态存储器时钟
页数 文件大小 规格书
14页 476K
描述
128K x 36 SYNCHRONOUS PIPELINED STATIC RAM

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中文翻译

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IS61SP12836-150TQ 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：QFP, QFP100,.63X.87Reach Compliance Code：unknown
风险等级：5.88Is Samacsys：N
最长访问时间：3.8 ns最大时钟频率 (fCLK)：150 MHz
I/O 类型：COMMONJESD-30 代码：R-PQFP-G100
JESD-609代码：e0内存密度：4718592 bit
内存集成电路类型：STANDARD SRAM内存宽度：36
端子数量：100字数：131072 words
字数代码：128000工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：128KX36输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：QFP
封装等效代码：QFP100,.63X.87封装形状：RECTANGULAR
封装形式：FLATPACK并行/串行：PARALLEL
电源：3.3 V认证状态：Not Qualified
最大待机电流：0.005 A子类别：SRAMs
最大压摆率：0.22 mA标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：0.635 mm
端子位置：QUADBase Number Matches：1

IS61SP12836-150TQ 数据手册

 浏览型号IS61SP12836-150TQ的Datasheet PDF文件第2页浏览型号IS61SP12836-150TQ的Datasheet PDF文件第3页浏览型号IS61SP12836-150TQ的Datasheet PDF文件第4页浏览型号IS61SP12836-150TQ的Datasheet PDF文件第5页浏览型号IS61SP12836-150TQ的Datasheet PDF文件第6页浏览型号IS61SP12836-150TQ的Datasheet PDF文件第7页 
IS61SP12836  
128K x 36 SYNCHRONOUS  
PIPELINED STATIC RAM  
FEATURES  
DESCRIPTION  
The ICSI IS61SP12836 is a high-speed, low-power synchro-  
nous static RAM designed to provide a burstable, high-perfor-  
mance, secondary cache for the i486™, Pentium™, 680X0™,  
and PowerPC™ microprocessors. It is organized as 131,072  
words by 36 bits, fabricated with ICSI's advanced CMOS  
technology. The device integrates a 2-bit burst counter, high-  
speed SRAM core, and high-drive capability outputs into a  
single monolithic circuit. All synchronous inputs pass through  
registers controlled by a positive-edge-triggered single clock  
input.  
• Internal self-timed write cycle  
• Individual Byte Write Control and Global Write  
• Clock controlled, registered address, data and  
control  
• Pentium™ or linear burst sequence control  
using MODE input  
• Three chip enables for simple depth expansion  
and address pipelining  
• Common data inputs and data outputs  
• JEDEC 100-pin LQFP and  
119-pin PBGA package  
• Single +3.3V, +10%, –5% power supply  
• Power-down snooze mode  
Write cycles are internally self-timed and are initiated by the  
rising edge of the clock input. Write cycles can be from one to  
four bytes wide as controlled by the write control inputs.  
Separate byte enables allow individual bytes to be written.  
BW1 controls DQa, BW2 controls DQb, BW3 controls DQc,  
BW4 controls DQd, conditioned by BWE being LOW. A LOW  
on GW input would cause all bytes to be written.  
Bursts can be initiated with either ADSP (Address Status  
Processor) or ADSC (Address Status Cache Controller) input  
pins. Subsequent burst addresses can be generated internally  
by the IS61SP12836 and controlled by the ADV (burst address  
advance) input pin.  
The mode pin is used to select the burst sequence order,  
Linear burst is achieved when this pin is tied LOW. Interleave  
burst is achieved when this pin is tied HIGH or left floating.  
FAST ACCESS TIME  
Symbol  
Parameter  
-166  
3.5  
6
-150  
3.8  
6.7  
-133  
4
7.5  
133  
-117  
4
8.5  
117  
-5  
5
10  
100  
Units  
ns  
ns  
tKQ  
Clock Access Time  
Cycle Time  
tKC  
Frenquency  
166  
150  
MHz  
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors  
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.  
Integrated Circuit Solution Inc.  
1
SSR012-0B  
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与IS61SP12836-150TQ相关器件

型号 品牌 获取价格 描述 数据表
IS61SP12836-150TQI ISSI

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 		Cache SRAM, 128KX36, 3.8ns, CMOS, PQFP100, TQFP-100
IS61SP12836-166B ICSI

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 		128K x 36 SYNCHRONOUS PIPELINED STATIC RAM
IS61SP12836-166B ISSI

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 		Cache SRAM, 128KX36, 3.5ns, CMOS, PBGA119, PLASTIC, BGA-119
IS61SP12836-166TQ ISSI

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 		Cache SRAM, 128KX36, 3.5ns, CMOS, PQFP100, TQFP-100
IS61SP12836-166TQ ICSI

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 		128K x 36 SYNCHRONOUS PIPELINED STATIC RAM
IS61SP12836-166TQI ISSI

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 		Cache SRAM, 128KX36, 3.5ns, CMOS, PQFP100, TQFP-100
IS61SP12836-200B ISSI

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 		Cache SRAM, 128KX36, 3.1ns, CMOS, PBGA119, PLASTIC, BGA-119
IS61SP12836-200TQ ISSI

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 		Cache SRAM, 128KX36, 3.1ns, CMOS, PQFP100, TQFP-100
IS61SP12836-3.5B ETC

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 		x36 Fast Synchronous SRAM
IS61SP12836-3.5TQ ETC

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 		x36 Fast Synchronous SRAM

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