Datasheet > IS61NVVP409618B

IS61NVVP409618B

更新时间： 2024-11-19 01:01:31

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
39页	1162K
描述
100 percent bus utilization

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IS61NVVP409618B 数据手册

IS61NLP204836B/IS61NVP/NVVP204836B

IS61NLP409618B/IS61NVP/NVVP409618B

AUGUST 2014

2M x 36 and 4M x 18

72Mb, PIPELINE 'NO WAIT' STATE BUS SRAM

FEATURES

DESCRIPTION

The72Megproductfamilyfeatureshigh-speed,low-power

synchronousstaticRAMsdesignedtoprovideaburstable,

high-performance, 'no wait' state, device for networking

and communications applications. They are organized as

2,096,952 words by 36 bits and 4,193,904 words by 18

bits, fabricated with ISSI's advanced CMOS technology.

• 100 percent bus utilization

• No wait cycles between Read and Write

• Internal self-timed write cycle

• Individual Byte Write Control

• Single R/W (Read/Write) control pin

Incorporating a 'no wait' state feature, wait cycles are

eliminated when the bus switches from read to write, or

write to read. This device integrates a 2-bit burst counter,

high-speed SRAM core, and high-drive capability outputs

into a single monolithic circuit.

• Clock controlled, registered address,

data and control

• Interleaved or linear burst sequence control us-

ing MODE input

Allsynchronousinputspassthroughregistersarecontrolled

byapositive-edge-triggeredsingleclockinput.Operations

may be suspended and all synchronous inputs ignored

when Clock Enable, CKE is HIGH. In this state the internal

device will hold their previous values.

• Three chip enables for simple depth expansion

and address pipelining

• Power Down mode

• Common data inputs and data outputs

• CKE pin to enable clock and suspend operation

AllRead,WriteandDeselectcyclesareinitiatedbytheADV

input. When the ADV is HIGH the internal burst counter

is incremented. New external addresses can be loaded

when ADV is LOW.

• JEDEC 100-pin TQFP, 165-ball PBGA and 119-

ball PBGA packages

Write cycles are internally self-timed and are initiated

by the rising edge of the clock inputs and when WE is

LOW. Separate byte enables allow individual bytes to be

written.

• Power supply:

NLP: V^dd3.3V (± 5%), Vddq 3.3V/2.5V (± 5%)

NVP: V^dd2.5V (± 5%), Vddq 2.5V (± 5%)

NVVP: V^dd1.8V (± 5%), Vddq 1.8V (± 5%)

• JTAG Boundary Scan for PBGA packages

• Industrial temperature available

• Lead-free available

A burst mode pin (MODE) deﬁnes the order of the burst

sequence.WhentiedHIGH,theinterleavedburstsequence

is selected. When tied LOW, the linear burst sequence is

selected.

FAST ACCESS TIME

Symbol

t^kq

Parameter

250

2.8

200

3.1

166

3.8

Units

Clock Access Time

Cycle Time

t^kc

Frequency

250

200

166

MHz

liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device speciﬁcation before relying on

any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause

failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written

assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. A

8/4/2014

12 3 4 5 6 7...39

中文翻译

下载PDF

与IS61NVVP409618B相关器件

型号	品牌	获取价格	描述	数据表
IS61NVVP51236	ISSI	获取价格	256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVVP51236-200B	ISSI	获取价格	256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVVP51236-200BI	ISSI	获取价格	256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVVP51236-250B	ISSI	获取价格	256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVVP51236-250BI	ISSI	获取价格	256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM
IS61NW6432	ICSI	获取价格	64K x 32 SYNCHRONOUS STATIC RAM WITH NO-WAIT STATE BUS FEATURE
IS61NW6432-5PQ	ICSI	获取价格	64K x 32 SYNCHRONOUS STATIC RAM WITH NO-WAIT STATE BUS FEATURE
IS61NW6432-5TQ	ICSI	获取价格	64K x 32 SYNCHRONOUS STATIC RAM WITH NO-WAIT STATE BUS FEATURE
IS61NW6432-6PQ	ICSI	获取价格	64K x 32 SYNCHRONOUS STATIC RAM WITH NO-WAIT STATE BUS FEATURE
IS61NW6432-6TQ	ICSI	获取价格	64K x 32 SYNCHRONOUS STATIC RAM WITH NO-WAIT STATE BUS FEATURE

与IS61NVVP409618B相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

IS61NVVP409618B

IS61NVVP409618B 数据手册

与IS61NVVP409618B相关器件

与IS61NVVP409618B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS61NVVP409618B

IS61NVVP409618B 数据手册

与IS61NVVP409618B相关器件

与IS61NVVP409618B相关文章

您还可以找

您在本页遇到什么问题？