Datasheet > IS61LV25616AL

IS61LV25616AL

更新时间： 2024-11-15 23:01:19

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
12页	68K
描述
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

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IS61LV25616AL 数据手册

IS61LV25616AL

256K x 16 HIGH SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH 3.3V SUPPLY

ISSI

FEBRUARY2003

DESCRIPTION

FEATURES

The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit

static RAM organized as 262,144 words by 16 bits. It is

fabricated using ISSI's high-performance CMOS technol-

ogy. This highly reliable process coupled with innovative

circuitdesigntechniques,yieldshigh-performanceandlow

powerconsumptiondevices.

• High-speed access time:

— 10, 12 ns

• CMOS low power operation

• Low stand-by power:

— Less than 5 mA (typ.) CMOS stand-by

• TTL compatible interface levels

• Single 3.3V power supply

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

• Fully static operation: no clock or refresh

required

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs, CE and OE. The active LOW

Write Enable (WE) controls both writing and reading of the

memory. A data byte allows Upper Byte (UB) and Lower

Byte (LB) access.

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

The IS61LV25616AL is packaged in the JEDEC standard

44-pin400-milSOJ,44-pinTSOPTypeII,44-pinLQFPand

48-pin Mini BGA (8mm x 10mm).

FUNCTIONAL BLOCK DIAGRAM

256K x 16

MEMORY ARRAY

A0-A17

DECODER

VDD

GND

I/O0-I/O7

Lower Byte

I/O

DATA

CIRCUIT

COLUMN I/O

I/O8-I/O15

Upper Byte

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. A

02/21/03

12 3 4 5 6 7...12

中文翻译

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与IS61LV25616AL相关器件

型号	品牌	获取价格	描述	数据表
IS61LV25616AL-10B	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616AL-10BI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616AL-10BI-TR	ISSI	获取价格	暂无描述
IS61LV25616AL-10BLI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616AL-10K	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616AL-10KI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616AL-10KLI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616AL-10KLI-TR	ISSI	获取价格	暂无描述
IS61LV25616AL-10LQ	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616AL-10LQI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

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