Datasheet > 暂无类别数据> IS61LV25616AL-10KLI-TR

IS61LV25616AL-10KLI-TR

更新时间： 2024-11-16 13:01:55

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
12页	68K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IS61LV25616AL-10KLI-TR 数据手册

浏览型号IS61LV25616AL-10KLI-TR的Datasheet PDF文件第2页

浏览型号IS61LV25616AL-10KLI-TR的Datasheet PDF文件第3页

浏览型号IS61LV25616AL-10KLI-TR的Datasheet PDF文件第4页

浏览型号IS61LV25616AL-10KLI-TR的Datasheet PDF文件第5页

浏览型号IS61LV25616AL-10KLI-TR的Datasheet PDF文件第6页

IS61LV25616AL

256K x 16 HIGH SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH 3.3V SUPPLY

ISSI

FEBRUARY2003

DESCRIPTION

FEATURES

The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit

static RAM organized as 262,144 words by 16 bits. It is

fabricated using ISSI's high-performance CMOS technol-

ogy. This highly reliable process coupled with innovative

circuitdesigntechniques,yieldshigh-performanceandlow

powerconsumptiondevices.

• High-speed access time:

— 10, 12 ns

• CMOS low power operation

• Low stand-by power:

— Less than 5 mA (typ.) CMOS stand-by

• TTL compatible interface levels

• Single 3.3V power supply

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

• Fully static operation: no clock or refresh

required

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs, CE and OE. The active LOW

Write Enable (WE) controls both writing and reading of the

memory. A data byte allows Upper Byte (UB) and Lower

Byte (LB) access.

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

The IS61LV25616AL is packaged in the JEDEC standard

44-pin400-milSOJ,44-pinTSOPTypeII,44-pinLQFPand

48-pin Mini BGA (8mm x 10mm).

FUNCTIONAL BLOCK DIAGRAM

256K x 16

MEMORY ARRAY

A0-A17

DECODER

VDD

GND

I/O0-I/O7

Lower Byte

I/O

DATA

CIRCUIT

COLUMN I/O

I/O8-I/O15

Upper Byte

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. A

02/21/03

12 3 4 5 6 7...12

中文翻译

下载PDF

与IS61LV25616AL-10KLI-TR相关器件

型号	品牌	获取价格	描述	数据表
IS61LV25616AL-10LQ	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616AL-10LQI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616AL-10LQI-TR	ISSI	获取价格	暂无描述
IS61LV25616AL-10LQLI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616AL-10LQLI-TR	ISSI	获取价格	Standard SRAM, 256KX16, 10ns, CMOS, PQFP44,
IS61LV25616AL-10T	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616AL-10TI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616AL-10TI-TR	ISSI	获取价格	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44,
IS61LV25616AL-10TL	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616AL-10TLI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

与IS61LV25616AL-10KLI-TR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

12
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

6
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

33
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

30

产品中心

服务支持

精选活动

关于我们

帮助中心

IS61LV25616AL-10KLI-TR

IS61LV25616AL-10KLI-TR 数据手册

与IS61LV25616AL-10KLI-TR相关器件

与IS61LV25616AL-10KLI-TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS61LV25616AL-10KLI-TR

IS61LV25616AL-10KLI-TR 数据手册

与IS61LV25616AL-10KLI-TR相关器件

与IS61LV25616AL-10KLI-TR相关文章

您还可以找

您在本页遇到什么问题？