是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SOJ | 包装说明: | 0.400 INCH, SOJ-44 |
针数: | 44 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.8 | Is Samacsys: | N |
最长访问时间: | 8 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PDSO-J44 | JESD-609代码: | e0 |
长度: | 28.58 mm | 内存密度: | 4194304 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 44 |
字数: | 262144 words | 字数代码: | 256000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 256KX16 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOJ | 封装等效代码: | SOJ44,.44 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
并行/串行: | PARALLEL | 电源: | 3.3 V |
认证状态: | Not Qualified | 座面最大高度: | 3.76 mm |
最大待机电流: | 0.015 A | 最小待机电流: | 3.14 V |
子类别: | SRAMs | 最大压摆率: | 0.3 mA |
最大供电电压 (Vsup): | 3.63 V | 最小供电电压 (Vsup): | 3.135 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | J BEND |
端子节距: | 1.27 mm | 端子位置: | DUAL |
宽度: | 10.16 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS61LV25616-8LQ | ISSI |
获取价格 |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS61LV25616-8LQI | ISSI |
获取价格 |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS61LV25616-8T | ICSI |
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256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS61LV25616-8T | ISSI |
获取价格 |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS61LV25616-8TI | ICSI |
获取价格 |
256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS61LV25616-8TI | ISSI |
获取价格 |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS61LV25616AL | ISSI |
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256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS61LV25616AL-10B | ISSI |
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256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS61LV25616AL-10BI | ISSI |
获取价格 |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS61LV25616AL-10BI-TR | ISSI |
获取价格 |
暂无描述 |