Datasheet > 存储 > SRAM> IS61LV25616-8BI

IS61LV25616-8BI

更新时间： 2024-11-15 23:01:19

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
11页	96K
描述
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

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IS61LV25616-8BI 数据手册

IS61LV25616

256K x 16 HIGH SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH 3.3V SUPPLY

ISSI

AUGUST 2000

FEATURES

DESCRIPTION

The ISSI IS61LV25616 is a high-speed, 4,194,304-bit static

RAM organized as 262,144 words by 16 bits. It is fabricated

using ISSI'shigh-performanceCMOStechnology. Thishighly

reliable process coupled with innovative circuit design tech-

niques, yields high-performance and low power consumption

devices.

• High-speed access time:

— 7, 8, 10, 12, and 15 ns

• CMOS low power operation

• Low stand-by power:

— Less than 5 mA (typ.) CMOS stand-by

• TTL compatible interface levels

• Single 3.3V power supply

WhenCEisHIGH(deselected),thedeviceassumesastandby

mode at which the power dissipation can be reduced down

with CMOS input levels.

• Fully static operation: no clock or refresh

required

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs, CE and OE. The active LOW Write

Enable(WE)controlsbothwritingandreadingofthememory.A

databyteallowsUpperByte(UB)andLowerByte(LB)access.

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

The IS61LV25616 is packaged in the JEDEC standard

44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP and

48-pin Mini BGA (8mm x 10mm).

FUNCTIONAL BLOCK DIAGRAM

256K x 16

MEMORY ARRAY

A0-A17

DECODER

VCC

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CONTROL

CIRCUIT

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. B

09/29/00

12 3 4 5 6 7...11

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与IS61LV25616-8BI相关器件

型号	品牌	获取价格	描述	数据表
IS61LV25616-8K	ICSI	获取价格	256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-8K	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-8KI	ICSI	获取价格	256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-8KI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-8LQ	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-8LQI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-8T	ICSI	获取价格	256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-8T	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-8TI	ICSI	获取价格	256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-8TI	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

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