®
IS61C256AL
ISSI
32K x 8 HIGH-SPEED CMOS STATIC RAM
OCTOBER2006
DESCRIPTION
FEATURES
The ISSI IS61C256AL is a very high-speed, low power,
32,768 word by 8-bit static RAMs. It is fabricated using
ISSI's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques,yieldsaccesstimesasfastas10nsmaximum.
• High-speed access time: 10, 12 ns
• CMOS Low Power Operation
— 1 mW (typical) CMOS standby
— 125 mW (typical) operating
• Fully static operation: no clock or refresh
required
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 150 µW (typical) with CMOS input levels.
• TTL compatible inputs and outputs
• Single 5V power supply
• Lead-free available
Easy memory expansion is provided by using an active
LOW Chip Enable (CE) input and an active LOW Output
Enable (OE) input. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
TheIS61C256ALispincompatiblewithother32Kx8SRAMs
and are available in 28-pin SOJ and TSOP (Type I)
packages.
FUNCTIONAL BLOCK DIAGRAM
32K X 8
MEMORY ARRAY
A0-A14
DECODER
VDD
GND
I/O
DATA
CIRCUIT
COLUMN I/O
I/O0-I/O7
CE
CONTROL
CIRCUIT
OE
WE
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
1
Rev. B
10/23/06