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IS61C256AL-10T PDF预览

IS61C256AL-10T

更新时间: 2024-11-28 04:44:47
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
12页 98K
描述
32K x 8 HIGH-SPEED CMOS STATIC RAM

IS61C256AL-10T 数据手册

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®
IS61C256AL  
ISSI  
32K x 8 HIGH-SPEED CMOS STATIC RAM  
OCTOBER2006  
DESCRIPTION  
FEATURES  
The ISSI IS61C256AL is a very high-speed, low power,  
32,768 word by 8-bit static RAMs. It is fabricated using  
ISSI's high-performance CMOS technology. This highly  
reliable process coupled with innovative circuit design  
techniques,yieldsaccesstimesasfastas10nsmaximum.  
• High-speed access time: 10, 12 ns  
• CMOS Low Power Operation  
— 1 mW (typical) CMOS standby  
— 125 mW (typical) operating  
• Fully static operation: no clock or refresh  
required  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down to 150 µW (typical) with CMOS input levels.  
• TTL compatible inputs and outputs  
• Single 5V power supply  
• Lead-free available  
Easy memory expansion is provided by using an active  
LOW Chip Enable (CE) input and an active LOW Output  
Enable (OE) input. The active LOW Write Enable (WE)  
controls both writing and reading of the memory.  
TheIS61C256ALispincompatiblewithother32Kx8SRAMs  
and are available in 28-pin SOJ and TSOP (Type I)  
packages.  
FUNCTIONAL BLOCK DIAGRAM  
32K X 8  
MEMORY ARRAY  
A0-A14  
DECODER  
VDD  
GND  
I/O  
DATA  
CIRCUIT  
COLUMN I/O  
I/O0-I/O7  
CE  
CONTROL  
CIRCUIT  
OE  
WE  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
1
Rev. B  
10/23/06  

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