Datasheet > IS49NLC36160A

IS49NLC36160A

更新时间： 2024-10-29 01:11:51

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
36页	980K
描述
Reduced cycle time

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中文翻译

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数据手册

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IS49NLC36160A 数据手册

IS49NLC96400A, IS49NLC18320A, IS49NLC36160A

576Mb (64Mbx9, 32Mbx18, 18Mbx36)

Common I/O RLDRAM^2 Memory

ADVANCED INFORMATION

SEPTEMBER 2014

FEATURES



533MHz DDR operation (1.067 Gb/s/pin data rate)

38.4Gb/s peak bandwidth (x36 at 533 MHz clock

frequency)

Reduced cycle time (15ns at 533MHz)

32ms refresh (16K refresh for each bank; 128K

refresh command must be issued in total each 32ms)

8 internal banks

Non-multiplexed addresses (address multiplexing

option available)

SRAM-type interface

Programmable READ latency (RL), row cycle time,

and burst sequence length

Balanced READ and WRITE latencies in order to

optimize data bus utilization

Data mask signals (DM) to mask signal of WRITE

data; DM is sampled on both edges of DK.



Differential input clocks (CK, CK#)

Differential input data clocks (DKx, DKx#)

On-die DLL generates CK edge-aligned data and

output data clock signals

Data valid signal (QVLD)

HSTL I/O (1.5V or 1.8V nominal)

25-60Ω matched impedance outputs

2.5V V_EXT, 1.8V V_DD, 1.5V or 1.8V V_DDQI/O

On-die termination (ODT) R_TT



IEEE 1149.1 compliant JTAG boundary scan



Operating temperature:

Commercial

(T_C= 0° to +95°C )



Industrial

(T_C= -40°C to +95°C; T_A= -40°C to +85°C)

OPTIONS



Package:



144-ball FBGA (leaded)

144-ball FBGA (lead-free)



Configuration:



64Mx9

32Mx18

16Mx36



Clock Cycle Timing:

Speed Grade

-18

-25E

-25

-33

Unit

t_RC

t_CK

1.875

2.5

3.3

any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein.

Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for

products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the

product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not

authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

RLDRAM^is a registered trademark of Micron Technology, Inc.

Integrated Silicon Solution, Inc. – www.issi.com –

Rev. 00A, 9/10/2014

12 3 4 5 6 7...36

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与IS49NLC36160A相关器件

型号	品牌	获取价格	描述	数据表
IS49NLC36160A-18BLI	ISSI	获取价格	DDR DRAM, 16MX36, CMOS, PBGA144, FBGA-144
IS49NLC36160A-18WBLI	ISSI	获取价格	DDR DRAM, 16MX36, CMOS, PBGA144, WBGA-144
IS49NLC36160A-25BI	ISSI	获取价格	DDR DRAM, 16MX36, CMOS, PBGA144, FBGA-144
IS49NLC36160A-25BL	ISSI	获取价格	DDR DRAM, 16MX36, CMOS, PBGA144, FBGA-144
IS49NLC36160A-25EB	ISSI	获取价格	DDR DRAM, 16MX36, CMOS, PBGA144, FBGA-144
IS49NLC36160A-25EBL	ISSI	获取价格	DDR DRAM, 16MX36, CMOS, PBGA144, FBGA-144
IS49NLC36160A-25EWBL	ISSI	获取价格	DDR DRAM, 16MX36, CMOS, PBGA144, WBGA-144
IS49NLC36800	ISSI	获取价格	288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
IS49NLC36800-25BL	ISSI	获取价格	DDR DRAM, 8MX36, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144
IS49NLC36800-25EBL	ISSI	获取价格	DDR DRAM, 8MX36, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144

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