Datasheet > IS49NLC36800-25WBL

IS49NLC36800-25WBL

更新时间： 2024-10-28 21:16:39

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器双倍数据速率内存集成电路
页数	文件大小	规格书
34页	892K
描述
DDR DRAM, 8MX36, CMOS, PBGA144, WBGA-144

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技术参数
数据手册

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IS49NLC36800-25WBL 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	TBGA,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	10 weeks
风险等级：	5.7	访问模式：	MULTI BANK PAGE BURST
其他特性：	AUTO REFRESH	JESD-30 代码：	R-PBGA-B144
长度：	18.5 mm	内存密度：	301989888 bit
内存集成电路类型：	DDR DRAM	内存宽度：	36
功能数量：	1	端口数量：	1
端子数量：	144	字数：	8388608 words
字数代码：	8000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	8MX36	封装主体材料：	PLASTIC/EPOXY
封装代码：	TBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, THIN PROFILE	峰值回流温度（摄氏度）：	NOT SPECIFIED
座面最大高度：	1.2 mm	最大供电电压 (Vsup)：	1.9 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	11 mm
Base Number Matches：	1

IS49NLC36800-25WBL 数据手册

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IS49NLC93200,IS49NLC18160,IS49NLC36800

288Mb (x9, x18, x36) Common I/O RLDRAM^2 Memory

JUNE 2017

FEATURES



400MHz DDR operation (800Mb/s/pin data rate)

28.8Gb/s peak bandwidth (x36 at 400 MHz clock

frequency)

Reduced cycle time (15ns at 400MHz)

32ms refresh (8K refresh for each bank; 64K refresh

command must be issued in total each 32ms)

8 internal banks

Non-multiplexed addresses (address multiplexing

option available)

SRAM-type interface

Programmable READ latency (RL), row cycle time,

and burst sequence length

Balanced READ and WRITE latencies in order to

optimize data bus utilization

Data mask signals (DM) to mask signal of WRITE

data; DM is sampled on both edges of DK.



Differential input clocks (CK, CK#)

Differential input data clocks (DKx, DKx#)

On-die DLL generates CK edge-aligned data and

output data clock signals

Data valid signal (QVLD)

HSTL I/O (1.5V or 1.8V nominal)

25-60Ω matched impedance outputs

2.5V V_EXT, 1.8V V_DD, 1.5V or 1.8V V_DDQI/O

On-die termination (ODT) R_TT

IEEE 1149.1 compliant JTAG boundary scan

Operating temperature:

Commercial



(T_C= 0° to +95°C; T_A= 0°C to +70°C),

Industrial

(T_C= -40°C to +95°C; T_A= -40°C to +85°C)

OPTIONS



Package:



144-ball WBGA (lead-free)



Configuration:



32Mx9

16Mx18

8Mx36



Clock Cycle Timing:

Speed Grade

-25E

-25

-33

-5

Unit

t_RC

t_CK

2.5

3.3

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the

latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

RLDRAM^is a registered trademark of Micron Technology, Inc.

Integrated Silicon Solution, Inc. – www.issi.com –

Rev. A2, 06/29/2017

12 3 4 5 6 7...34

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与IS49NLC36800-25WBL相关器件

型号	品牌	获取价格	描述	数据表
IS49NLC36800-33BL	ISSI	获取价格	DDR DRAM, 8MX36, 3.3ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144
IS49NLC36800-33WBLI	ISSI	获取价格	DDR DRAM, 8MX36, CMOS, PBGA144, WBGA-144
IS49NLC36800-5WBL	ISSI	获取价格	DDR DRAM, 8MX36, CMOS, PBGA144, WBGA-144
IS49NLC36800-5WBLI	ISSI	获取价格	DDR DRAM, 8MX36, CMOS, PBGA144, WBGA-144
IS49NLC93200	ISSI	获取价格	288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
IS49NLC93200-25B	ISSI	获取价格	DDR DRAM, 32MX9, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144
IS49NLC93200-25BI	ISSI	获取价格	DDR DRAM, 32MX9, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144
IS49NLC93200-25BL	ISSI	获取价格	DDR DRAM, 32MX9, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144
IS49NLC93200-25EBL	ISSI	获取价格	DDR DRAM, 32MX9, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144
IS49NLC93200-25EBLI	ISSI	获取价格	DDR DRAM, 32MX9, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144

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