生命周期: | Active | 包装说明: | TBGA, |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.69 | 访问模式: | MULTI BANK PAGE BURST |
其他特性: | AUTO REFRESH | JESD-30 代码: | R-PBGA-B144 |
长度: | 18.5 mm | 内存密度: | 301989888 bit |
内存集成电路类型: | DDR DRAM | 内存宽度: | 36 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 144 | 字数: | 8388608 words |
字数代码: | 8000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 8MX36 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE | 座面最大高度: | 1.2 mm |
最大供电电压 (Vsup): | 1.9 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | BALL | 端子节距: | 1 mm |
端子位置: | BOTTOM | 宽度: | 11 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS49NLC36800-5WBLI | ISSI |
获取价格 |
DDR DRAM, 8MX36, CMOS, PBGA144, WBGA-144 | |
IS49NLC93200 | ISSI |
获取价格 |
288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory | |
IS49NLC93200-25B | ISSI |
获取价格 |
DDR DRAM, 32MX9, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144 | |
IS49NLC93200-25BI | ISSI |
获取价格 |
DDR DRAM, 32MX9, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144 | |
IS49NLC93200-25BL | ISSI |
获取价格 |
DDR DRAM, 32MX9, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144 | |
IS49NLC93200-25EBL | ISSI |
获取价格 |
DDR DRAM, 32MX9, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144 | |
IS49NLC93200-25EBLI | ISSI |
获取价格 |
DDR DRAM, 32MX9, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144 | |
IS49NLC93200-25EWBLI | ISSI |
获取价格 |
DDR DRAM, 32MX9, CMOS, PBGA144, WBGA-144 | |
IS49NLC93200-25WBL | ISSI |
获取价格 |
DDR DRAM, 32MX9, CMOS, PBGA144, WBGA-144 | |
IS49NLC93200-25WBLI | ISSI |
获取价格 |
DDR DRAM, 32MX9, CMOS, PBGA144, WBGA-144 |