IS49NLS93200,IS49NLS18160
288Mb (x9, x18) Separate I/O RLDRAM 2 Memory
JANUARY 2020
FEATURES
400MHz DDR operation (800Mb/s/pin data rate)
14.4 Gb/s peak bandwidth (x18 Separate I/O at 400
MHz clock frequency)
Reduced cycle time (15ns at 400MHz)
32ms refresh (8K refresh for each bank; 64K refresh
command must be issued in total each 32ms)
8 internal banks
Non-multiplexed addresses (address multiplexing
option available)
SRAM-type interface
Programmable READ latency (RL), row cycle time,
and burst sequence length
Balanced READ and WRITE latencies in order to
optimize data bus utilization
Data mask signals (DM) to mask signal of WRITE
data; DM is sampled on both edges of DK.
Differential input clocks (CK, CK#)
Differential input data clocks (DKx, DKx#)
On-die DLL generates CK edge-aligned data and
output data clock signals
Data valid signal (QVLD)
HSTL I/O (1.5V or 1.8V nominal)
25-60Ω matched impedance outputs
2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O
On-die termination (ODT) RTT
IEEE 1149.1 compliant JTAG boundary scan
Operating temperature:
Commercial
(TC = 0° to +95°C; TA = 0°C to +70°C),
Industrial
(TC = -40°C to +95°C; TA = -40°C to +85°C)
OPTIONS
Package:
144-ball WBGA (lead-free)
Configuration:
32Mx9
16Mx18
Clock Cycle Timing:
Speed Grade
-25E
15
-25
20
-33
20
Unit
ns
tRC
tCK
2.5
2.5
3.3
ns
Copyright © 2020 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the
latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
RLDRAM is a registered trademark of Micron Technology, Inc.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. B, 01/22/2020
1
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