Datasheet > IS49NLS93200-33B

IS49NLS93200-33B

更新时间： 2024-02-25 18:11:10

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器
页数	文件大小	规格书
33页	1365K
描述
IC DRAM 288M PARALLEL 144FCBGA

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中文翻译

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数据手册

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IS49NLS93200-33B 数据手册

IS49NLS93200,IS49NLS18160

288Mb (x9, x18) Separate I/O RLDRAM^2 Memory

JANUARY 2020

FEATURES



400MHz DDR operation (800Mb/s/pin data rate)

14.4 Gb/s peak bandwidth (x18 Separate I/O at 400

MHz clock frequency)

Reduced cycle time (15ns at 400MHz)

32ms refresh (8K refresh for each bank; 64K refresh

command must be issued in total each 32ms)

8 internal banks

Non-multiplexed addresses (address multiplexing

option available)

SRAM-type interface

Programmable READ latency (RL), row cycle time,

and burst sequence length

Balanced READ and WRITE latencies in order to

optimize data bus utilization

Data mask signals (DM) to mask signal of WRITE

data; DM is sampled on both edges of DK.



Differential input clocks (CK, CK#)

Differential input data clocks (DKx, DKx#)

On-die DLL generates CK edge-aligned data and

output data clock signals

Data valid signal (QVLD)

HSTL I/O (1.5V or 1.8V nominal)

25-60Ω matched impedance outputs

2.5V V_EXT, 1.8V V_DD, 1.5V or 1.8V V_DDQI/O

On-die termination (ODT) R_TT

IEEE 1149.1 compliant JTAG boundary scan

Operating temperature:

Commercial



(T_C= 0° to +95°C; T_A= 0°C to +70°C),

Industrial

(T_C= -40°C to +95°C; T_A= -40°C to +85°C)

OPTIONS



Package:



144-ball WBGA (lead-free)

Configuration:



32Mx9

16Mx18

Clock Cycle Timing:

Speed Grade

-25E

-25

-33

Unit

t_RC

t_CK

2.5

3.3

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the

latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

RLDRAM^is a registered trademark of Micron Technology, Inc.

Integrated Silicon Solution, Inc. – www.issi.com –

Rev. B, 01/22/2020

12 3 4 5 6 7...33

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与IS49NLS93200-33B相关器件

型号	品牌	获取价格	描述	数据表
IS49NLS93200-33BI	ISSI	获取价格	IC DRAM 288M PARALLEL 144FCBGA
IS49NLS93200-33BL	ISSI	获取价格	IC DRAM 288M PARALLEL 144FCBGA
IS49NLS93200-33BLI	ISSI	获取价格	IC DRAM 288M PARALLEL 144FCBGA
IS49NLS93200-33WBLI	ISSI	获取价格	DDR DRAM, 32MX9, CMOS, PBGA144, WFBGA-144
IS49NLS96400	ISSI	获取价格	576Mb (x9, x18) Separate I/O RLDRAMï 2 Memo
IS49NLS96400-18BL	ISSI	获取价格	DDR DRAM, 64MX9, 1.875ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144
IS49NLS96400A	ISSI	获取价格	8 internal banks
IS49NLS96400A-18EBL	ISSI	获取价格	DDR DRAM, 64MX9, CMOS, PBGA144, FBGA-144
IS49NLS96400A-33WBL	ISSI	获取价格	DDR DRAM,
IS49RL18320	ISSI	获取价格	576Mb: x18, x36 RLDRAM 3 Features

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