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IS49NLS93200-33WBLI PDF预览

IS49NLS93200-33WBLI

更新时间： 2024-02-03 16:31:35
品牌 Logo 应用领域
美国芯成 - ISSI 动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
34页 892K
描述
DDR DRAM, 32MX9, CMOS, PBGA144, WFBGA-144

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中文翻译

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IS49NLS93200-33WBLI 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：TBGA,Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：10 weeks
风险等级：5.72访问模式：MULTI BANK PAGE BURST
其他特性：AUTO REFRESHJESD-30 代码：R-PBGA-B144
长度：18.5 mm内存密度：301989888 bit
内存集成电路类型：DDR DRAM内存宽度：9
功能数量：1端口数量：1
端子数量：144字数：33554432 words
字数代码：32000000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：32MX9封装主体材料：PLASTIC/EPOXY
封装代码：TBGA封装形状：RECTANGULAR
封装形式：GRID ARRAY, THIN PROFILE峰值回流温度（摄氏度）：NOT SPECIFIED
座面最大高度：1.2 mm最大供电电压 (Vsup)：1.9 V
最小供电电压 (Vsup)：1.7 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：BALL
端子节距：1 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：11 mm
Base Number Matches：1

IS49NLS93200-33WBLI 数据手册

 浏览型号IS49NLS93200-33WBLI的Datasheet PDF文件第2页浏览型号IS49NLS93200-33WBLI的Datasheet PDF文件第3页浏览型号IS49NLS93200-33WBLI的Datasheet PDF文件第4页浏览型号IS49NLS93200-33WBLI的Datasheet PDF文件第5页浏览型号IS49NLS93200-33WBLI的Datasheet PDF文件第6页浏览型号IS49NLS93200-33WBLI的Datasheet PDF文件第7页 
IS49NLC93200,IS49NLC18160,IS49NLC36800  
288Mb (x9, x18, x36) Common I/O RLDRAM2 Memory  
JUNE 2017  
FEATURES  
400MHz DDR operation (800Mb/s/pin data rate)  
28.8Gb/s peak bandwidth (x36 at 400 MHz clock  
frequency)  
Reduced cycle time (15ns at 400MHz)  
32ms refresh (8K refresh for each bank; 64K refresh  
command must be issued in total each 32ms)  
8 internal banks  
Non-multiplexed addresses (address multiplexing  
option available)  
SRAM-type interface  
Programmable READ latency (RL), row cycle time,  
and burst sequence length  
Balanced READ and WRITE latencies in order to  
optimize data bus utilization  
Data mask signals (DM) to mask signal of WRITE  
data; DM is sampled on both edges of DK.  
Differential input clocks (CK, CK#)  
Differential input data clocks (DKx, DKx#)  
On-die DLL generates CK edge-aligned data and  
output data clock signals  
Data valid signal (QVLD)  
HSTL I/O (1.5V or 1.8V nominal)  
25-60Ω matched impedance outputs  
2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O  
On-die termination (ODT) RTT  
IEEE 1149.1 compliant JTAG boundary scan  
Operating temperature:  
Commercial  
(TC = 0° to +95°C; TA = 0°C to +70°C),  
Industrial  
(TC = -40°C to +95°C; TA = -40°C to +85°C)  
OPTIONS  
Package:  
144-ball WBGA (lead-free)  
Configuration:  
32Mx9  
16Mx18  
8Mx36  
Clock Cycle Timing:  
Speed Grade  
-25E  
15  
-25  
20  
-33  
20  
-5  
20  
5
Unit  
ns  
tRC  
tCK  
2.5  
2.5  
3.3  
ns  
Copyright © 2017 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without  
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the  
latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can  
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such  
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
RLDRAMis a registered trademark of Micron Technology, Inc.  
Integrated Silicon Solution, Inc. – www.issi.com –  
Rev. A2, 06/29/2017  
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与IS49NLS93200-33WBLI相关器件

型号 品牌 获取价格 描述 数据表
IS49NLS96400 ISSI

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 		576Mb (x9, x18) Separate I/O RLDRAM 2 Memo
IS49NLS96400-18BL ISSI

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 		DDR DRAM, 64MX9, 1.875ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144
IS49NLS96400A ISSI

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 		8 internal banks
IS49NLS96400A-18EBL ISSI

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 		DDR DRAM, 64MX9, CMOS, PBGA144, FBGA-144
IS49NLS96400A-33WBL ISSI

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 		DDR DRAM,
IS49RL18320 ISSI

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 		576Mb: x18, x36 RLDRAM 3 Features
IS49RL18320-093BL ISSI

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 		DDR DRAM, 32MX18, 10ns, CMOS, PBGA168, LEAD FREE, FBGA-168
IS49RL18320-093BLI ISSI

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 		DDR DRAM, 32MX18, 10ns, CMOS, PBGA168, LEAD FREE, FBGA-168
IS49RL18320-093EBL ISSI

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 		DDR DRAM, 32MX18, 8ns, CMOS, PBGA168, LEAD FREE, FBGA-168
IS49RL18320-093EBLI ISSI

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 		DDR DRAM, 32MX18, 8ns, CMOS, PBGA168, LEAD FREE, FBGA-168

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