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IS49NLS18320A-18EBI PDF预览

IS49NLS18320A-18EBI

更新时间： 2024-01-11 08:45:55
品牌 Logo 应用领域
美国芯成 - ISSI 动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
36页 972K
描述
DDR DRAM, 32MX18, CMOS, PBGA144, FBGA-144

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IS49NLS18320A-18EBI 技术参数

生命周期：Obsolete包装说明：FBGA-144
Reach Compliance Code：unknown风险等级：5.68
访问模式：MULTI BANK PAGE BURST其他特性：AUTO REFRESH
JESD-30 代码：R-PBGA-B144长度：18.5 mm
内存密度：603979776 bit内存集成电路类型：DDR DRAM
内存宽度：18功能数量：1
端口数量：1端子数量：144
字数：33554432 words字数代码：32000000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：32MX18
封装主体材料：PLASTIC/EPOXY封装代码：TBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE
座面最大高度：1.2 mm最大供电电压 (Vsup)：1.9 V
最小供电电压 (Vsup)：1.7 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：BALL
端子节距：1 mm端子位置：BOTTOM
宽度：11 mmBase Number Matches：1

IS49NLS18320A-18EBI 数据手册

 浏览型号IS49NLS18320A-18EBI的Datasheet PDF文件第2页浏览型号IS49NLS18320A-18EBI的Datasheet PDF文件第3页浏览型号IS49NLS18320A-18EBI的Datasheet PDF文件第4页浏览型号IS49NLS18320A-18EBI的Datasheet PDF文件第5页浏览型号IS49NLS18320A-18EBI的Datasheet PDF文件第6页浏览型号IS49NLS18320A-18EBI的Datasheet PDF文件第7页 
IS49NLS96400A, IS49NLS18320A  
576Mb (64Mbx9, 32Mbx18)  
Seperate I/O RLDRAM2 Memory  
ADVANCED INFORMATION  
SEPTEMBER 2014  
FEATURES  
533MHz DDR operation (1.067 Gb/s/pin data rate)  
38.4Gb/s peak bandwidth (x18 at 533 MHz clock  
frequency)  
Reduced cycle time (15ns at 533MHz)  
32ms refresh (16K refresh for each bank; 128K  
refresh command must be issued in total each  
32ms)  
8 internal banks  
Non-multiplexed addresses (address  
multiplexing option available)  
Differential input clocks (CK, CK#)  
Differential input data clocks (DKx, DKx#)  
On-die DLL generates CK edge-aligned data  
and output data clock signals  
Data valid signal (QVLD)  
HSTL I/O (1.5V or 1.8V nominal)  
25-60Ω matched impedance outputs  
2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O  
On-die termination (ODT) RTT  
IEEE 1149.1 compliant JTAG boundary scan  
Operating temperature:  
SRAM-type interface  
Programmable READ latency (RL), row cycle  
time, and burst sequence length  
Balanced READ and WRITE latencies in order  
to optimize data bus utilization  
Data mask signals (DM) to mask signal of  
WRITE data; DM is sampled on both edges of  
DK.  
Commercial  
(TC = 0° to +95°C)  
Industrial  
(TC = -40°C to +95°C; TA = -40°C to +85°C)  
OPTIONS  
Package:  
144-ball FBGA (leaded)  
144-ball FBGA (lead-free)  
Configuration:  
64Mx9  
32Mx18  
Clock Cycle Timing:  
Speed Grade  
-18  
15  
-25E  
15  
-25  
20  
-33  
20  
Unit  
ns  
tRC  
tCK  
1.875  
2.5  
2.5  
3.3  
ns  
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at  
any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein.  
Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for  
products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the  
product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not  
authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
RLDRAMis a registered trademark of Micron Technology, Inc.  
Integrated Silicon Solution, Inc. – www.issi.com –  
Rev. 00A, 9/10/2014  
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与IS49NLS18320A-18EBI相关器件

型号 品牌 获取价格 描述 数据表
IS49NLS18320A-18EBLI ISSI

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 		DDR DRAM, 32MX18, CMOS, PBGA144, FBGA-144
IS49NLS18320A-25WBL ISSI

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 		DDR DRAM, 32MX18, CMOS, PBGA144, WBGA-144
IS49NLS18320A-33WBL ISSI

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 		DDR DRAM, 32MX18, CMOS, PBGA144, WBGA-144
IS49NLS93200 ISSI

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 		288Mb (x9, x18) Separate I/O RLDRAM 2 Memory
IS49NLS93200-25B ISSI

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 		IC DRAM 288M PARALLEL 144FCBGA
IS49NLS93200-25BI ISSI

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 		IC DRAM 288M PARALLEL 144FCBGA
IS49NLS93200-25BL ISSI

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 		IC DRAM 288M PARALLEL 144FCBGA
IS49NLS93200-25BLI ISSI

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 		IC DRAM 288M PARALLEL 144FCBGA
IS49NLS93200-25WBLI ISSI

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 		DDR DRAM, 32MX9, CMOS, PBGA144, WFBGA-144
IS49NLS93200-33B ISSI

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 		IC DRAM 288M PARALLEL 144FCBGA

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