Datasheet > IS49NLC36800-5WBLI

IS49NLC36800-5WBLI

更新时间： 2024-10-28 20:42:39

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器双倍数据速率内存集成电路
页数	文件大小	规格书
35页	1254K
描述
DDR DRAM, 8MX36, CMOS, PBGA144, WBGA-144

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IS49NLC36800-5WBLI 技术参数

生命周期：	Active	包装说明：	TBGA,
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.7	访问模式：	MULTI BANK PAGE BURST
其他特性：	AUTO REFRESH	JESD-30 代码：	R-PBGA-B144
长度：	18.5 mm	内存密度：	301989888 bit
内存集成电路类型：	DDR DRAM	内存宽度：	36
功能数量：	1	端口数量：	1
端子数量：	144	字数：	8388608 words
字数代码：	8000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	8MX36	封装主体材料：	PLASTIC/EPOXY
封装代码：	TBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, THIN PROFILE	座面最大高度：	1.2 mm
最大供电电压 (Vsup)：	1.9 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	宽度：	11 mm
Base Number Matches：	1

IS49NLC36800-5WBLI 数据手册

浏览型号IS49NLC36800-5WBLI的Datasheet PDF文件第2页

浏览型号IS49NLC36800-5WBLI的Datasheet PDF文件第3页

浏览型号IS49NLC36800-5WBLI的Datasheet PDF文件第4页

浏览型号IS49NLC36800-5WBLI的Datasheet PDF文件第5页

浏览型号IS49NLC36800-5WBLI的Datasheet PDF文件第6页

浏览型号IS49NLC36800-5WBLI的Datasheet PDF文件第7页

IS49NLC93200,IS49NLC18160,IS49NLC36800

288Mb (x9, x18, x36) Common I/O RLDRAM^2 Memory

JUNE 2016

FEATURES



400MHz DDR operation (800Mb/s/pin data rate)

28.8Gb/s peak bandwidth (x36 at 400 MHz clock

frequency)

Reduced cycle time (15ns at 400MHz)

32ms refresh (8K refresh for each bank; 64K refresh

command must be issued in total each 32ms)

8 internal banks

Non-multiplexed addresses (address multiplexing

option available)

SRAM-type interface

Programmable READ latency (RL), row cycle time,

and burst sequence length

Balanced READ and WRITE latencies in order to

optimize data bus utilization

Data mask signals (DM) to mask signal of WRITE data;

DM is sampled on both edges of DK.



Differential input clocks (CK, CK#)

Differential input data clocks (DKx, DKx#)

On-die DLL generates CK edge-aligned data and

output data clock signals

Data valid signal (QVLD)

HSTL I/O (1.5V or 1.8V nominal)

25-60Ω matched impedance outputs

2.5V V_EXT, 1.8V V_DD, 1.5V or 1.8V V_DDQI/O

On-die termination (ODT) R_TT

IEEE 1149.1 compliant JTAG boundary scan

Operating temperature:

Commercial



(T_C= 0° to +95°C; T_A= 0°C to +70°C),

Industrial

(T_C= -40°C to +95°C; T_A= -40°C to +85°C)

OPTIONS



Package:



144-ball FBGA (leaded)

144-ball FBGA (lead-free)

144-ball WBGA (lead-free)

Configuration:



32Mx9

16Mx18

8Mx36

Clock Cycle Timing:

Speed Grade

-25E

-25

-33

-5

Unit

t_RC

t_CK

2.5

3.3

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the

latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

RLDRAM^is a registered trademark of Micron Technology, Inc.

Integrated Silicon Solution, Inc. – www.issi.com –

Rev. A1, 06/03/2016

12 3 4 5 6 7...35

中文翻译

下载PDF

与IS49NLC36800-5WBLI相关器件

型号	品牌	获取价格	描述	数据表
IS49NLC93200	ISSI	获取价格	288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
IS49NLC93200-25B	ISSI	获取价格	DDR DRAM, 32MX9, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144
IS49NLC93200-25BI	ISSI	获取价格	DDR DRAM, 32MX9, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144
IS49NLC93200-25BL	ISSI	获取价格	DDR DRAM, 32MX9, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144
IS49NLC93200-25EBL	ISSI	获取价格	DDR DRAM, 32MX9, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144
IS49NLC93200-25EBLI	ISSI	获取价格	DDR DRAM, 32MX9, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144
IS49NLC93200-25EWBLI	ISSI	获取价格	DDR DRAM, 32MX9, CMOS, PBGA144, WBGA-144
IS49NLC93200-25WBL	ISSI	获取价格	DDR DRAM, 32MX9, CMOS, PBGA144, WBGA-144
IS49NLC93200-25WBLI	ISSI	获取价格	DDR DRAM, 32MX9, CMOS, PBGA144, WBGA-144
IS49NLC93200-33B	ISSI	获取价格	DDR DRAM, 32MX9, 3.3ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144

与IS49NLC36800-5WBLI相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

13
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

13
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

40
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

47

产品中心

服务支持

精选活动

关于我们

帮助中心

IS49NLC36800-5WBLI

IS49NLC36800-5WBLI 技术参数

IS49NLC36800-5WBLI 数据手册

与IS49NLC36800-5WBLI相关器件

与IS49NLC36800-5WBLI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS49NLC36800-5WBLI

IS49NLC36800-5WBLI 技术参数

IS49NLC36800-5WBLI 数据手册

与IS49NLC36800-5WBLI相关器件

与IS49NLC36800-5WBLI相关文章

您还可以找

您在本页遇到什么问题？