Datasheet > IS49NLC36160A-25EWBL

IS49NLC36160A-25EWBL

更新时间： 2024-10-28 20:57:07

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器双倍数据速率内存集成电路
页数	文件大小	规格书
36页	718K
描述
DDR DRAM, 16MX36, CMOS, PBGA144, WBGA-144

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技术参数
数据手册

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IS49NLC36160A-25EWBL 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	TBGA,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	10 weeks
风险等级：	5.67	访问模式：	MULTI BANK PAGE BURST
其他特性：	AUTO REFRESH	JESD-30 代码：	R-PBGA-B144
JESD-609代码：	e1	长度：	18.5 mm
内存密度：	603979776 bit	内存集成电路类型：	DDR DRAM
内存宽度：	36	功能数量：	1
端口数量：	1	端子数量：	144
字数：	16777216 words	字数代码：	16000000
工作模式：	SYNCHRONOUS	组织：	16MX36
封装主体材料：	PLASTIC/EPOXY	封装代码：	TBGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, THIN PROFILE
峰值回流温度（摄氏度）：	NOT SPECIFIED	座面最大高度：	1.2 mm
最大供电电压 (Vsup)：	1.9 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	11 mm	Base Number Matches：	1

IS49NLC36160A-25EWBL 数据手册

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IS49NLC96400A/IS49NLC18320A/IS49NLC36160A

64Mbx9, 32Mbx18, 16Mbx36

Common I/O RLDRAM^2 Memory

FEBURARY 2017

FEATURES



533MHz DDR operation (1.067 Gb/s/pin data rate)

38.4Gb/s peak bandwidth (x36 at 533 MHz clock

frequency)

Reduced cycle time (15ns at 533MHz)

32ms refresh (16K refresh for each bank; 128K

refresh command must be issued in total each 32ms)

8 internal banks

Non-multiplexed addresses (address multiplexing

option available)

SRAM-type interface

Programmable READ latency (RL), row cycle time,

and burst sequence length

Balanced READ and WRITE latencies in order to

optimize data bus utilization

Data mask signals (DM) to mask signal of WRITE

data; DM is sampled on both edges of DK.



Differential input clocks (CK, CK#)

Differential input data clocks (DKx, DKx#)

On-die DLL generates CK edge-aligned data and

output data clock signals

Data valid signal (QVLD)

HSTL I/O (1.5V or 1.8V nominal)

25-60Ω matched impedance outputs

2.5V V_EXT, 1.8V V_DD, 1.5V or 1.8V V_DDQI/O

On-die termination (ODT) R_TT



IEEE 1149.1 compliant JTAG boundary scan



Operating temperature:

Commercial

(T_C= 0° to +95°C )



Industrial

(T_C= -40°C to +95°C; T_A= -40°C to +85°C)

OPTIONS



Package:



144-ball WBGA (lead-free)



Configuration:



64Mx9

32Mx18

16Mx36



Clock Cycle Timing:

Speed Grade

-18

-25E

-25

-33

Unit

t_RC

t_CK

1.875

2.5

3.3

any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein.

Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for

products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the

product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not

authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. – www.issi.com –

Rev.A2, 02/09/2017

12 3 4 5 6 7...36

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与IS49NLC36160A-25EWBL相关器件

型号	品牌	获取价格	描述	数据表
IS49NLC36800	ISSI	获取价格	288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
IS49NLC36800-25BL	ISSI	获取价格	DDR DRAM, 8MX36, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144
IS49NLC36800-25EBL	ISSI	获取价格	DDR DRAM, 8MX36, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144
IS49NLC36800-25EBLI	ISSI	获取价格	暂无描述
IS49NLC36800-25EWBL	ISSI	获取价格	DDR DRAM, 8MX36, CMOS, PBGA144, WBGA-144
IS49NLC36800-25EWBLI	ISSI	获取价格	DDR DRAM, 8MX36, CMOS, PBGA144, WBGA-144
IS49NLC36800-25WBL	ISSI	获取价格	DDR DRAM, 8MX36, CMOS, PBGA144, WBGA-144
IS49NLC36800-33BL	ISSI	获取价格	DDR DRAM, 8MX36, 3.3ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144
IS49NLC36800-33WBLI	ISSI	获取价格	DDR DRAM, 8MX36, CMOS, PBGA144, WBGA-144
IS49NLC36800-5WBL	ISSI	获取价格	DDR DRAM, 8MX36, CMOS, PBGA144, WBGA-144

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