Datasheet > IS49NLC36160A-25BI

IS49NLC36160A-25BI

更新时间： 2024-10-28 15:45:39

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器双倍数据速率内存集成电路
页数	文件大小	规格书
36页	1087K
描述
DDR DRAM, 16MX36, CMOS, PBGA144, FBGA-144

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IS49NLC36160A-25BI 技术参数

生命周期：	Obsolete	包装说明：	FBGA-144
Reach Compliance Code：	unknown	风险等级：	5.67
访问模式：	MULTI BANK PAGE BURST	其他特性：	AUTO REFRESH
JESD-30 代码：	R-PBGA-B144	长度：	18.5 mm
内存密度：	603979776 bit	内存集成电路类型：	DDR DRAM
内存宽度：	36	功能数量：	1
端口数量：	1	端子数量：	144
字数：	16777216 words	字数代码：	16000000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	16MX36
封装主体材料：	PLASTIC/EPOXY	封装代码：	TBGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, THIN PROFILE
座面最大高度：	1.2 mm	最大供电电压 (Vsup)：	1.9 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
宽度：	11 mm	Base Number Matches：	1

IS49NLC36160A-25BI 数据手册

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IS49NLC96400A/IS49NLC18320A/IS49NLC36160A

64Mbx9, 32Mbx18, 18Mbx36

Common I/O RLDRAM^2 Memory

ADVANCED INFORMATION

OCTOBER 2015

FEATURES



533MHz DDR operation (1.067 Gb/s/pin data rate)

38.4Gb/s peak bandwidth (x36 at 533 MHz clock

frequency)

Reduced cycle time (15ns at 533MHz)

32ms refresh (16K refresh for each bank; 128K

refresh command must be issued in total each 32ms)

8 internal banks

Non-multiplexed addresses (address multiplexing

option available)

SRAM-type interface

Programmable READ latency (RL), row cycle time,

and burst sequence length

Balanced READ and WRITE latencies in order to

optimize data bus utilization

Data mask signals (DM) to mask signal of WRITE

data; DM is sampled on both edges of DK.



Differential input clocks (CK, CK#)

Differential input data clocks (DKx, DKx#)

On-die DLL generates CK edge-aligned data and

output data clock signals

Data valid signal (QVLD)

HSTL I/O (1.5V or 1.8V nominal)

25-60Ω matched impedance outputs

2.5V V_EXT, 1.8V V_DD, 1.5V or 1.8V V_DDQI/O

On-die termination (ODT) R_TT



IEEE 1149.1 compliant JTAG boundary scan



Operating temperature:

Commercial

(T_C= 0° to +95°C )



Industrial

(T_C= -40°C to +95°C; T_A= -40°C to +85°C)

OPTIONS



Package:



144-ball FBGA (leaded)

144-ball FBGA (lead-free)

144-ball WBGA (lead-free)



Configuration:



64Mx9

32Mx18

16Mx36

Clock Cycle Timing:

Speed Grade

-18

-25E

-25

-33

Unit

t_RC

t_CK

1.875

2.5

3.3

any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein.

Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for

products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the

product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not

authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

RLDRAM^is a registered trademark of Micron Technology, Inc.

Integrated Silicon Solution, Inc. – www.issi.com –

Rev. 00B, 9/28/2015

12 3 4 5 6 7...36

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与IS49NLC36160A-25BI相关器件

型号	品牌	获取价格	描述	数据表
IS49NLC36160A-25BL	ISSI	获取价格	DDR DRAM, 16MX36, CMOS, PBGA144, FBGA-144
IS49NLC36160A-25EB	ISSI	获取价格	DDR DRAM, 16MX36, CMOS, PBGA144, FBGA-144
IS49NLC36160A-25EBL	ISSI	获取价格	DDR DRAM, 16MX36, CMOS, PBGA144, FBGA-144
IS49NLC36160A-25EWBL	ISSI	获取价格	DDR DRAM, 16MX36, CMOS, PBGA144, WBGA-144
IS49NLC36800	ISSI	获取价格	288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
IS49NLC36800-25BL	ISSI	获取价格	DDR DRAM, 8MX36, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144
IS49NLC36800-25EBL	ISSI	获取价格	DDR DRAM, 8MX36, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144
IS49NLC36800-25EBLI	ISSI	获取价格	暂无描述
IS49NLC36800-25EWBL	ISSI	获取价格	DDR DRAM, 8MX36, CMOS, PBGA144, WBGA-144
IS49NLC36800-25EWBLI	ISSI	获取价格	DDR DRAM, 8MX36, CMOS, PBGA144, WBGA-144

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