Datasheet > IS49FL004T-33VCE

IS49FL004T-33VCE

更新时间： 2024-10-29 01:11:51

品牌	Logo	应用领域
美国芯成 - ISSI		PC
页数	文件大小	规格书
45页	1154K
描述
4 Mbit 3.3 Volt-only Firmware Hub/LPC Flash Memory

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IS49FL004T-33VCE 数据手册

IS49FL004T

4 Mbit 3.3 Volt-only Firmware Hub/LPC Flash Memory

FEATURES

SEPTEMBER 2013

• Single Power Supply Operation

- Low voltage range: 3.0 V - 3.6 V

• Firmware HUB (FWH)/Low Pin Count (LPC)

Mode

- 33 MHz synchronous operation with PCI bus

- 5-signal communication interface for in-system

read and write operations

• Standard Intel Firmware Hub/LPC Interface

- Read compatible to Intel^®82802 Firmware Hub

devices

- Standard SDP Command Set

- Conforms to Intel LPC Interface Specification

Revision 1.1

- Data# Polling and Toggle Bit features

- Register-based read and write protection for

each block (FWH mode only)

• Memory Configuration

- IS49FL004: 512K x 8 (4 Mbit)

- 4 ID pins for multiple Flash chips selection

(FWH mode only)

- 5 GPI pins for General Purpose Input Register

- TBL# pin for hardware write protection to Boot

Block

- WP# pin for hardware write protection to whole

memory array except Boot Block

• Cost Effective Sector/Block Architecture

- IS49FL004: One hundred and twenty-eight

uniform 4 Kbyte sectors, or eight uniform 64

Kbyte blocks (sector group)

• Top Boot Block

- IS49FL004: 64 Kbyte top Boot Block

• Address/Address Multiplexed (A/A Mux)

Mode

- 11-pin multiplexed address and 8-pin data I/O

interface

- Supports fast programming on EPROM

programmers

• Automatic Erase and Program Operation

- Build-in automatic program verification for

extended product endurance

- Typical 25 µs/byte programming time

- Typical 50 ms sector/block/chip erase time

- Standard SDP Command Set

- Data# Polling and Toggle Bit features

• Two Configurable Interfaces

- In-System hardware interface: Auto detection of

Firmware Hub (FWH) or Low Pin Count (LPC)

memory cycle for in-system read and write

operations

• Lower Power Consumption

- Typical 2 mA active read current

- Typical 7 mA program/erase current

- Address/Address-Multiplexed (A/A Mux)

interface for programming on EPROM Pro-

grammers during manufacturing

• High Product Endurance

- Guarantee 100,000 program/erase cycles per

single sector (preliminary)

- Minimum 20 years data retention

• Compatible Pin-out and Packaging

- 32-pin (8 mm x 14 mm) VSOP

- 32-pin PLCC

• Hardware Data Protection

Integrated Silicon Solution, Inc.- www.issi.com

Rev. A1

9/19/2013

12 3 4 5 6 7...45

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与IS49FL004T-33VCE相关器件

型号	品牌	获取价格	描述	数据表
IS49NLC18160	ISSI	获取价格	288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
IS49NLC18160-25WBLI	ISSI	获取价格	DDR DRAM, 16MX18, CMOS, PBGA144, WBGA-144
IS49NLC18160-33WBLI	ISSI	获取价格	DDR DRAM, 16MX18, CMOS, PBGA144, WBGA-144
IS49NLC18160-5BI	ISSI	获取价格	DDR DRAM, 16MX18, 5ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144
IS49NLC18320	ISSI	获取价格	576Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
IS49NLC18320A	ISSI	获取价格	Reduced cycle time
IS49NLC18320A-18WBL	ISSI	获取价格	DDR DRAM, 32MX18, CMOS, PBGA144, WBGA-144
IS49NLC18320A-25WBL	ISSI	获取价格	DDR DRAM, 32MX18, CMOS, PBGA144, WBGA-144
IS49NLC18320A-33WBL	ISSI	获取价格	DDR DRAM, 32MX18, CMOS, PBGA144, WBGA-144
IS49NLC36160	ISSI	获取价格	576Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory

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