Datasheet > IS43TR16440B-093NBLI

IS43TR16440B-093NBLI

更新时间： 2024-10-28 19:55:55

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器双倍数据速率内存集成电路
页数	文件大小	规格书
88页	3932K
描述
DDR DRAM, 64MX16, CMOS, PBGA96, 9 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, TWBGA-96

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IS43TR16440B-093NBLI 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	TFBGA,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.32
风险等级：	5.75	访问模式：	MULTI BANK PAGE BURST
其他特性：	AUTO/SELF REFRESH	JESD-30 代码：	R-PBGA-B96
JESD-609代码：	e1	长度：	13 mm
内存密度：	1073741824 bit	内存集成电路类型：	DDR DRAM
内存宽度：	16	功能数量：	1
端口数量：	1	端子数量：	96
字数：	67108864 words	字数代码：	64000000
工作模式：	SYNCHRONOUS	组织：	64MX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	TFBGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）：	NOT SPECIFIED	座面最大高度：	1.2 mm
自我刷新：	YES	最大供电电压 (Vsup)：	1.575 V
最小供电电压 (Vsup)：	1.425 V	标称供电电压 (Vsup)：	1.5 V
表面贴装：	YES	技术：	CMOS
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	9 mm
Base Number Matches：	1

IS43TR16440B-093NBLI 数据手册

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IS43/46TR16640B, IS43/46TR16640BL

IS43/46TR81280B, IS43/46TR81280BL

128MX8, 64MX16 1Gb DDR3 SDRAM

SEPTEMBER 2015

FEATURES



Standard Voltage: V_DDand V_DDQ= 1.5V ± 0.075V



Refresh Interval:

7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C

3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C

Low Voltage (L): V_DDand V_DDQ= 1.35V + 0.1V, -0.067V

- Backward compatible to 1.5V



High speed data transfer rates with system

frequency up to 1066 MHz



Partial Array Self Refresh

Asynchronous RESET pin



8 internal banks for concurrent operation

8n-bit pre-fetch architecture

TDQS (Termination Data Strobe) supported (x8

only)



OCD (Off-Chip Driver Impedance Adjustment)

Dynamic ODT (On-Die Termination)

Driver strength : RZQ/7, RZQ/6 (RZQ = 240  )

Write Leveling

Programmable CAS Latency

Programmable Additive Latency: 0, CL-1,CL-2

Programmable CAS WRITE latency (CWL) based

on tCK



Programmable Burst Length: 4 and 8

Up to 200 MHz in DLL off mode

Operating temperature:

Programmable Burst Sequence: Sequential or

Interleave

Commercial (T_C= 0°C to +95°C)

Industrial (T_C= -40°C to +95°C)

Automotive, A1 (T_C= -40°C to +95°C)

Automotive, A2 (T_C= -40°C to +105°C)



BL switch on the fly

Auto Self Refresh(ASR)

Self Refresh Temperature(SRT)

OPTIONS

ADDRESS TABLE

Parameter



Configuration:

128Mx8

64Mx16

128Mx8

A0-A13

A0-A9

64Mx16

A0-A12

A0-A9

Row Addressing

Column Addressing

Bank Addressing

Page size

Package:

96-ball FBGA (9mm x 13mm) for x16

78-ball FBGA (8mm x 10.5mm) for x8

BA0-2

1KB

2KB

Auto Precharge Addressing

BL switch on the fly

A10/AP

A12/BC#

A10/AP

A12/BC#

SPEED BIN

Speed Option

15G

125J

107M

093N

Units

JEDEC Speed Grade

DDR3-1333G

DDR3-1600J

DDR3-1866M

DDR3-2133N

CL-nRCD-nRP

tRCD,tRP(min)

8-8-8

12.0

10-10-10

12.5

13-13-13

13.91

14-14-14

13.09

tCK

Note: Faster speed options may be backward compatible to slower speed options. Refer to timing tables (8.3)

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised

to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product

can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use

in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. – www.issi.com –

Rev. F

09/11/2015

12 3 4 5 6 7...88

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与IS43TR16440B-093NBLI相关器件

型号	品牌	获取价格	描述	数据表
IS43TR16440B-107MBLI	ISSI	获取价格	DDR DRAM, 64MX16, CMOS, PBGA96, 9 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, TWBGA-96
IS43TR16512A	ISSI	获取价格	Programmable CAS Latency
IS43TR16512A-125KBL	ISSI	获取价格	DDR DRAM, 512MX16, CMOS, PBGA96, LFBGA-96
IS43TR16512A-125KBLI	ISSI	获取价格	DDR DRAM, 512MX16, CMOS, PBGA96, LFBGA-96
IS43TR16512A-15HBLI	ISSI	获取价格	DDR DRAM, 512MX16, CMOS, PBGA96, LFBGA-96
IS43TR16512AL	ISSI	获取价格	Programmable CAS Latency
IS43TR16512AL-125KBL	ISSI	获取价格	DDR DRAM, 512MX16, CMOS, PBGA96, LFBGA-96
IS43TR16512AL-125KBLI	ISSI	获取价格	DDR DRAM, 512MX16, CMOS, PBGA96, LFBGA-96
IS43TR16640A	ISSI	获取价格	128MX8, 64MX16 1Gb DDR3 SDRAM
IS43TR16640A-15GBLI	ISSI	获取价格	DDR DRAM, 64MX16, 12ns, CMOS, PBGA96, 9 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-96

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