Datasheet > IS43TR16640B

IS43TR16640B

更新时间： 2024-10-29 01:08:19

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
88页	3899K
描述
Programmable CAS Latency

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数据手册

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IS43TR16640B 数据手册

IS43/46TR16640B, IS43/46TR16640BL

IS43/46TR81280B, IS43/46TR81280BL

128MX8, 64MX16 1Gb DDR3 SDRAM

NOVEMBER 2014

FEATURES



Standard Voltage: V_DDand V_DDQ= 1.5V ± 0.075V



Refresh Interval:

7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C

3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C

Low Voltage (L): V_DDand V_DDQ= 1.35V + 0.1V, -0.067V

- Backward compatible to 1.5V



High speed data transfer rates with system

frequency up to 1066 MHz



Partial Array Self Refresh

Asynchronous RESET pin



8 internal banks for concurrent operation

8n-bit pre-fetch architecture

TDQS (Termination Data Strobe) supported (x8

only)



OCD (Off-Chip Driver Impedance Adjustment)

Dynamic ODT (On-Die Termination)

Driver strength : RZQ/7, RZQ/6 (RZQ = 240  )

Write Leveling

Programmable CAS Latency

Programmable Additive Latency: 0, CL-1,CL-2

Programmable CAS WRITE latency (CWL) based

on tCK



Programmable Burst Length: 4 and 8

Operating temperature:

Programmable Burst Sequence: Sequential or

Interleave

Commercial (T_C= 0°C to +95°C)

Industrial (T_C= -40°C to +95°C)

Automotive, A1 (T_C= -40°C to +95°C)

Automotive, A2 (T_C= -40°C to +105°C)



BL switch on the fly

Auto Self Refresh(ASR)

Self Refresh Temperature(SRT)

OPTIONS

ADDRESS TABLE

Parameter



Configuration:

128Mx8

64Mx16

128Mx8

A0-A13

A0-A9

64Mx16

A0-A12

A0-A9

Row Addressing

Column Addressing

Bank Addressing

Page size



Package:

96-ball FBGA (9mm x 13mm) for x16

78-ball FBGA (8mm x 10.5mm) for x8

BA0-2

1KB

2KB

Auto Precharge Addressing

BL switch on the fly

A10/AP

A12/BC#

A10/AP

A12/BC#

SPEED BIN

Speed Option

15G

125J

107M

093N

Units

JEDEC Speed Grade

DDR3-1333G

DDR3-1600J

DDR3-1866M

DDR3-2133N

CL-nRCD-nRP

tRCD,tRP(min)

8-8-8

12.0

10-10-10

12.5

13-13-13

13.91

14-14-14

13.09

tCK

Note: Faster speed options may be backward compatible to slower speed options. Refer to timing tables (8.3)

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised

to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product

can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use

in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. – www.issi.com –

Rev. C1

11/12/2014

12 3 4 5 6 7...88

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与IS43TR16640B相关器件

型号	品牌	获取价格	描述	数据表
IS43TR16640B-107MBL	ISSI	获取价格	IC DRAM 1G PARALLEL 96TWBGA
IS43TR16640B-107MBLI	ISSI	获取价格	IC DRAM 1G PARALLEL 96TWBGA
IS43TR16640B-107MBLI-TR	ISSI	获取价格	IC DRAM 1G PARALLEL 96TWBGA
IS43TR16640B-107MBL-TR	ISSI	获取价格	IC DRAM 1G PARALLEL 96TWBGA
IS43TR16640B-125JBLI-TR	ISSI	获取价格	IC DRAM 1G PARALLEL 96TWBGA
IS43TR16640B-125JBL-TR	ISSI	获取价格	IC DRAM 1G PARALLEL 96TWBGA
IS43TR16640B-125KBLI	ISSI	获取价格	IC DRAM 1G PARALLEL 96TWBGA
IS43TR16640B-125KBLI-TR	ISSI	获取价格	IC DRAM 1G PARALLEL 96TWBGA
IS43TR16640B-15GBL	ISSI	获取价格	IC DRAM 1G PARALLEL 96TWBGA
IS43TR16640B-15GBLI	ISSI	获取价格	IC DRAM 1G PARALLEL 96TWBGA

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