生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | TFBGA, | 针数: | 96 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.32 | 风险等级: | 5.63 |
访问模式: | MULTI BANK PAGE BURST | 最长访问时间: | 13.125 ns |
其他特性: | AUTO SELF REFRESH MODE, ALSO OPERATES AT 1.35 V NOMINAL SUPPLY | JESD-30 代码: | R-PBGA-B96 |
长度: | 13 mm | 内存密度: | 1073741824 bit |
内存集成电路类型: | DDR DRAM | 内存宽度: | 16 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 96 | 字数: | 67108864 words |
字数代码: | 64000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 95 °C | 最低工作温度: | |
组织: | 64MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH | 座面最大高度: | 1.2 mm |
自我刷新: | YES | 最大供电电压 (Vsup): | 1.575 V |
最小供电电压 (Vsup): | 1.425 V | 标称供电电压 (Vsup): | 1.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
宽度: | 9 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS43TR16640AL-125JBL | ISSI |
获取价格 |
DDR DRAM, 64MX16, CMOS, PBGA96, 9 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, TWBGA-96 | |
IS43TR16640AL-125JBLI | ISSI |
获取价格 |
DDR DRAM, 64MX16, CMOS, PBGA96, 9 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, TWBGA-96 | |
IS43TR16640B | ISSI |
获取价格 |
Programmable CAS Latency | |
IS43TR16640B-107MBL | ISSI |
获取价格 |
IC DRAM 1G PARALLEL 96TWBGA | |
IS43TR16640B-107MBLI | ISSI |
获取价格 |
IC DRAM 1G PARALLEL 96TWBGA | |
IS43TR16640B-107MBLI-TR | ISSI |
获取价格 |
IC DRAM 1G PARALLEL 96TWBGA | |
IS43TR16640B-107MBL-TR | ISSI |
获取价格 |
IC DRAM 1G PARALLEL 96TWBGA | |
IS43TR16640B-125JBLI-TR | ISSI |
获取价格 |
IC DRAM 1G PARALLEL 96TWBGA | |
IS43TR16640B-125JBL-TR | ISSI |
获取价格 |
IC DRAM 1G PARALLEL 96TWBGA | |
IS43TR16640B-125KBLI | ISSI |
获取价格 |
IC DRAM 1G PARALLEL 96TWBGA |