是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | TFBGA, | Reach Compliance Code: | compliant |
风险等级: | 5.35 | Is Samacsys: | N |
访问模式: | MULTI BANK PAGE BURST | 其他特性: | AUTO/SELF REFRESH |
JESD-30 代码: | R-PBGA-B96 | 长度: | 13 mm |
内存密度: | 1073741824 bit | 内存集成电路类型: | DDR DRAM |
内存宽度: | 16 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 96 |
字数: | 67108864 words | 字数代码: | 64000000 |
工作模式: | SYNCHRONOUS | 组织: | 64MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
座面最大高度: | 1.2 mm | 自我刷新: | YES |
最大供电电压 (Vsup): | 1.45 V | 最小供电电压 (Vsup): | 1.283 V |
标称供电电压 (Vsup): | 1.35 V | 表面贴装: | YES |
技术: | CMOS | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
宽度: | 9 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IS43TR16640AL-125JBLI | ISSI |
类似代替 |
DDR DRAM, 64MX16, CMOS, PBGA96, 9 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, TWBGA-96 | |
IS43TR16640BL-125JBLI | ISSI |
功能相似 |
IC DRAM 1G PARALLEL 96TWBGA | |
IS43TR16640BL-125JBL | ISSI |
功能相似 |
IC DRAM 1G PARALLEL 96TWBGA |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS43TR16640AL-125JBLI | ISSI |
获取价格 |
DDR DRAM, 64MX16, CMOS, PBGA96, 9 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, TWBGA-96 | |
IS43TR16640B | ISSI |
获取价格 |
Programmable CAS Latency | |
IS43TR16640B-107MBL | ISSI |
获取价格 |
IC DRAM 1G PARALLEL 96TWBGA | |
IS43TR16640B-107MBLI | ISSI |
获取价格 |
IC DRAM 1G PARALLEL 96TWBGA | |
IS43TR16640B-107MBLI-TR | ISSI |
获取价格 |
IC DRAM 1G PARALLEL 96TWBGA | |
IS43TR16640B-107MBL-TR | ISSI |
获取价格 |
IC DRAM 1G PARALLEL 96TWBGA | |
IS43TR16640B-125JBLI-TR | ISSI |
获取价格 |
IC DRAM 1G PARALLEL 96TWBGA | |
IS43TR16640B-125JBL-TR | ISSI |
获取价格 |
IC DRAM 1G PARALLEL 96TWBGA | |
IS43TR16640B-125KBLI | ISSI |
获取价格 |
IC DRAM 1G PARALLEL 96TWBGA | |
IS43TR16640B-125KBLI-TR | ISSI |
获取价格 |
IC DRAM 1G PARALLEL 96TWBGA |