Datasheet > IS43TR16512A-125KBLI

IS43TR16512A-125KBLI

更新时间： 2024-10-28 19:34:39

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器双倍数据速率内存集成电路
页数	文件大小	规格书
80页	2645K
描述
DDR DRAM, 512MX16, CMOS, PBGA96, LFBGA-96

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IS43TR16512A-125KBLI 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
包装说明：	LFBGA,	Reach Compliance Code：	compliant
Factory Lead Time：	12 weeks	风险等级：	2.15
访问模式：	DUAL BANK PAGE BURST	其他特性：	AUTO/SELF REFRESH
JESD-30 代码：	R-PBGA-B96	JESD-609代码：	e1
长度：	14 mm	内存密度：	8589934592 bit
内存集成电路类型：	DDR DRAM	内存宽度：	16
湿度敏感等级：	3	功能数量：	1
端口数量：	1	端子数量：	96
字数：	536870912 words	字数代码：	512000000
工作模式：	SYNCHRONOUS	组织：	512MX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	LFBGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度（摄氏度）：	260	座面最大高度：	1.4 mm
自我刷新：	YES	最大供电电压 (Vsup)：	1.575 V
最小供电电压 (Vsup)：	1.425 V	标称供电电压 (Vsup)：	1.5 V
表面贴装：	YES	技术：	CMOS
端子面层：	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	10	宽度：	10 mm
Base Number Matches：	1

IS43TR16512A-125KBLI 数据手册

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IS43/46TR16512A, IS43/46TR16512AL

512Mx16 8Gb DDR3 SDRAM

MARCH 2017

FEATURES



Standard Voltage: V_DDand V_DDQ= 1.5V ± 0.075V



Refresh Interval:

Low Voltage (L): V_DDand V_DDQ= 1.35V + 0.1V, -0.067V

-Backward compatible to 1.5V

7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C

3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C



High speed data transfer rates with system

frequency up to 933 MHz



Partial Array Self Refresh



8 internal banks for concurrent operation

8n-Bit pre-fetch architecture

Asynchronous RESET pin

OCD (Off-Chip Driver Impedance Adjustment)

Dynamic ODT (On-Die Termination)

Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)

Write Leveling

Programmable CAS Latency

Programmable Additive Latency: 0, CL-1,CL-2

Programmable CAS WRITE latency (CWL) based

on tCK

Up to 200 MHz in DLL off mode

Operating temperature:



Programmable Burst Length: 4 and 8

Programmable Burst Sequence: Sequential or

Interleave

Commercial (T_C= 0°C to +95°C)

Industrial (T_C= -40°C to +95°C)

Automotive, A1 (T_C= -40°C to +95°C)

Automotive, A2 (T_C= -40°C to +105°C)



BL switch on the fly

Auto Self Refresh(ASR)

Self Refresh Temperature(SRT)

Parameter

512Mx16

A0-A14

A0-A9

BA0-2

OPTIONS

Row Addressing

Column Addressing

Bank Addressing

Ranks



Configuration:

512Mx16(dual die)

Package:



96-ball BGA (10mm x 14mm)

Page size

2KB

Auto Precharge

Addressing

A10/AP

BL switch on the fly

A12/BC#

ADDRESS TABLE

SPEED BIN

Speed Option

15H

125K

107M

Units

JEDEC Speed Grade

DDR3-1333H

DDR3-1600K

DDR3-1866M

CL-nRCD-nRP

tRCD,tRP(min)

9-9-9

13.5

11-11-11

13.75

13-13-13

13.91

tCK

Note:Faster speed options are backward compatible to slower speed options.

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised

to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product

can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use

in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. – www.issi.com –

Rev. D

02/17/2017

12 3 4 5 6 7...80

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与IS43TR16512A-125KBLI相关器件

型号	品牌	获取价格	描述	数据表
IS43TR16512A-15HBLI	ISSI	获取价格	DDR DRAM, 512MX16, CMOS, PBGA96, LFBGA-96
IS43TR16512AL	ISSI	获取价格	Programmable CAS Latency
IS43TR16512AL-125KBL	ISSI	获取价格	DDR DRAM, 512MX16, CMOS, PBGA96, LFBGA-96
IS43TR16512AL-125KBLI	ISSI	获取价格	DDR DRAM, 512MX16, CMOS, PBGA96, LFBGA-96
IS43TR16640A	ISSI	获取价格	128MX8, 64MX16 1Gb DDR3 SDRAM
IS43TR16640A-15GBLI	ISSI	获取价格	DDR DRAM, 64MX16, 12ns, CMOS, PBGA96, 9 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-96
IS43TR16640A-187FBL	ISSI	获取价格	DDR DRAM, 64MX16, 13.125ns, CMOS, PBGA96, 9 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-96
IS43TR16640AL-125JBL	ISSI	获取价格	DDR DRAM, 64MX16, CMOS, PBGA96, 9 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, TWBGA-96
IS43TR16640AL-125JBLI	ISSI	获取价格	DDR DRAM, 64MX16, CMOS, PBGA96, 9 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, TWBGA-96
IS43TR16640B	ISSI	获取价格	Programmable CAS Latency

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