Datasheet > IS43TR16640A

IS43TR16640A

更新时间： 2024-10-28 12:23:07

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器双倍数据速率
页数	文件大小	规格书
71页	2234K
描述
128MX8, 64MX16 1Gb DDR3 SDRAM

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中文翻译

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数据手册

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IS43TR16640A 数据手册

IS43TR16640A, IS43TR81280A

128MX8, 64MX16 1Gb DDR3 SDRAM

ADVANCED INFORMATION

APRIL 2012

FEATURES



Standard Voltage: V_DDand V_DDQ= 1.5V ± 0.075V

Low Voltage (L): V_DDand V_DDQ= 1.35V + 0.1V, -0.067V



Refresh Interval:

7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C

3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C



High speed data transfer rates with system

frequency up to 933 MHz



Partial Array Self Refresh



8 internal banks for concurrent operation

8Bits pre-fetch architecture

Asynchronous RESET pin

TDQS (Termination Data Strobe) supported (x8

only)

Programmable CAS Latency: 5, 6, 7, 8, 9, 10 and



OCD (Off-Chip Driver Impedance Adjustment)

Dynamic ODT (On-Die Termination)

Driver strength : RZQ/7, RZQ/6 (RZQ = 240  )

Write Leveling



Programmable Additive Latency: 0, CL-1,CL-2

Programmable CAS WRITE latency (CWL) based

on tCK



Programmable Burst Length: 4 and 8

Operating temperature:

Programmable Burst Sequence: Sequential or

Interleave

Commercial (T_C= 0°C to +95°C)

Industrial (T_C= -40°C to +95°C)

Automotive, A1 (T_C= -40°C to +95°C)

Automotive, A2 (T_C= -40°C to +105°C)



BL switch on the fly

Auto Self Refresh(ASR)

Self Refresh Temperature(SRT)

OPTIONS

ADDRESS TABLE

Parameter

Row Addressing

Column Addressing

Bank Addressing

Page size



Configuration:

128Mx8

64Mx16

128Mx8

A0-A13

A0-A9

64Mx16

A0-A12

A0-A9



Package:

96-ball FBGA (9mm x 13mm) for x16

78-ball FBGA (8mm x 10.5mm) for x8

BA0-2

1KB

2KB

Auto Precharge Addressing

BL switch on the fly

A10/AP

A12/BC#

A10/AP

A12/BC#

SPEED BIN

Speed Option

187F

15G

15H

125J

125K

107K

107L

Units

DDR3-

1066F

7-7-7

DDR3-

1333G

8-8-8

DDR3-

1333H

9-9-9

DDR3-

1600J

10-10-10

12.5

DDR3-

1600K

11-11-11

13.75

DDR3-

1866K

11-11-11

11.77

DDR3-

1866L

12-12-12

12.84

JEDEC Speed Grade

CL-nRCD-nRP

tRCD,tRP(min)

tCK

13.125

12.0

13.5

Note: Faster speed options are backward compatible to slower speed options.

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised

to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product

can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use

in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. – www.issi.com –

Rev. 00A

04/16/2012

12 3 4 5 6 7...71

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与IS43TR16640A相关器件

型号	品牌	获取价格	描述	数据表
IS43TR16640A-15GBLI	ISSI	获取价格	DDR DRAM, 64MX16, 12ns, CMOS, PBGA96, 9 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-96
IS43TR16640A-187FBL	ISSI	获取价格	DDR DRAM, 64MX16, 13.125ns, CMOS, PBGA96, 9 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-96
IS43TR16640AL-125JBL	ISSI	获取价格	DDR DRAM, 64MX16, CMOS, PBGA96, 9 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, TWBGA-96
IS43TR16640AL-125JBLI	ISSI	获取价格	DDR DRAM, 64MX16, CMOS, PBGA96, 9 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, TWBGA-96
IS43TR16640B	ISSI	获取价格	Programmable CAS Latency
IS43TR16640B-107MBL	ISSI	获取价格	IC DRAM 1G PARALLEL 96TWBGA
IS43TR16640B-107MBLI	ISSI	获取价格	IC DRAM 1G PARALLEL 96TWBGA
IS43TR16640B-107MBLI-TR	ISSI	获取价格	IC DRAM 1G PARALLEL 96TWBGA
IS43TR16640B-107MBL-TR	ISSI	获取价格	IC DRAM 1G PARALLEL 96TWBGA
IS43TR16640B-125JBLI-TR	ISSI	获取价格	IC DRAM 1G PARALLEL 96TWBGA

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