Datasheet > IS43TR16512A

IS43TR16512A

更新时间： 2024-10-29 01:20:39

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
80页	2997K
描述
Programmable CAS Latency

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中文翻译

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数据手册

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IS43TR16512A 数据手册

IS43/46TR16512A, IS43/46TR16512AL,

512Mx16 8Gb DDR3 SDRAM

SEPTEMBER 2014

FEATURES



Standard Voltage: V_DDand V_DDQ= 1.5V ± 0.075V



Refresh Interval:

Low Voltage (L): V_DDand V_DDQ= 1.35V + 0.1V, -0.067V

-Backward compatible to 1.5V

7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C

3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C



High speed data transfer rates with system

frequency up to 933 MHz



Partial Array Self Refresh



8 internal banks for concurrent operation

8n-Bit pre-fetch architecture

Asynchronous RESET pin

OCD (Off-Chip Driver Impedance Adjustment)

Dynamic ODT (On-Die Termination)

Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)

Write Leveling

Programmable CAS Latency

Programmable Additive Latency: 0, CL-1,CL-2

Programmable CAS WRITE latency (CWL) based

on tCK

Operating temperature:



Programmable Burst Length: 4 and 8

Commercial (T_C= 0°C to +95°C)

Industrial (T_C= -40°C to +95°C)

Automotive, A1 (T_C= -40°C to +95°C)

Automotive, A2 (T_C= -40°C to +105°C)

Programmable Burst Sequence: Sequential or

Interleave



BL switch on the fly

Auto Self Refresh(ASR)

Self Refresh Temperature(SRT)

Parameter

512Mx16

A0-A14

A0-A9

BA0-2

OPTIONS

Row Addressing

Column Addressing

Bank Addressing

Ranks



Configuration:

512Mx16(dual die)

Package:



96-ball FBGA (10mm x 14mm)

Page size

2KB

Auto Precharge

Addressing

A10/AP

BL switch on the fly

A12/BC#

ADDRESS TABLE

SPEED BIN

Speed Option

15H

125K

107M

Units

JEDEC Speed Grade

DDR3-1333H

DDR3-1600K

DDR3-1866M

CL-nRCD-nRP

tRCD,tRP(min)

9-9-9

13.5

11-11-11

13.75

13-13-13

13.91

tCK

Note:Faster speed options are backward compatible to slower speed options.

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised

to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product

can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use

in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. – www.issi.com –

Rev. A

08/13/2014

12 3 4 5 6 7...80

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与IS43TR16512A相关器件

型号	品牌	获取价格	描述	数据表
IS43TR16512A-125KBL	ISSI	获取价格	DDR DRAM, 512MX16, CMOS, PBGA96, LFBGA-96
IS43TR16512A-125KBLI	ISSI	获取价格	DDR DRAM, 512MX16, CMOS, PBGA96, LFBGA-96
IS43TR16512A-15HBLI	ISSI	获取价格	DDR DRAM, 512MX16, CMOS, PBGA96, LFBGA-96
IS43TR16512AL	ISSI	获取价格	Programmable CAS Latency
IS43TR16512AL-125KBL	ISSI	获取价格	DDR DRAM, 512MX16, CMOS, PBGA96, LFBGA-96
IS43TR16512AL-125KBLI	ISSI	获取价格	DDR DRAM, 512MX16, CMOS, PBGA96, LFBGA-96
IS43TR16640A	ISSI	获取价格	128MX8, 64MX16 1Gb DDR3 SDRAM
IS43TR16640A-15GBLI	ISSI	获取价格	DDR DRAM, 64MX16, 12ns, CMOS, PBGA96, 9 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-96
IS43TR16640A-187FBL	ISSI	获取价格	DDR DRAM, 64MX16, 13.125ns, CMOS, PBGA96, 9 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-96
IS43TR16640AL-125JBL	ISSI	获取价格	DDR DRAM, 64MX16, CMOS, PBGA96, 9 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, TWBGA-96

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