Datasheet > IS43DR86400C-3DBI-TR

IS43DR86400C-3DBI-TR

更新时间： 2024-11-24 22:31:51

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器
页数	文件大小	规格书
48页	1438K
描述
IC DRAM 512M PARALLEL 60TWBGA

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IS43DR86400C-3DBI-TR 数据手册

浏览型号IS43DR86400C-3DBI-TR的Datasheet PDF文件第2页

浏览型号IS43DR86400C-3DBI-TR的Datasheet PDF文件第3页

浏览型号IS43DR86400C-3DBI-TR的Datasheet PDF文件第4页

浏览型号IS43DR86400C-3DBI-TR的Datasheet PDF文件第5页

浏览型号IS43DR86400C-3DBI-TR的Datasheet PDF文件第6页

浏览型号IS43DR86400C-3DBI-TR的Datasheet PDF文件第7页

IS43/46DR86400C

IS43/46DR16320C

64Mx8, 32Mx16 DDR2 DRAM

FEATURES

•ꢀ Vdd = 1.8V 0.1V, Vddq = 1.8V 0.1V

MARCH 2013

DESCRIPTION

ISSI's 512Mb DDR2 SDRAM uses a double-data-rate

architecture to achieve high-speed operation. The

double-data rate architecture is essentially a 4n-prefetch

architecture, with an interface designed to transfer two

data words per clock cycle at the I/O balls.

•ꢀ JEDEC standard 1.8V I/O (SSTL_18-compatible)

•ꢀ Double data rate interface: two data transfers

per clock cycle

•ꢀ Differential data strobe (DQS, DQS)

•ꢀ 4-bit prefetch architecture

•ꢀ On chip DLL to align DQ and DQS transitions

ADDRESS TABLE

with CK

Parameter

64M x 8

32M x 16

•ꢀ 4 internal banks for concurrent operation

•ꢀ Programmable CAS latency (CL) 3, 4, 5, and 6

Conﬁguration

16M x 8 x 4

8M x 16 x 4

banks

supported

Refresh Count

8K/64ms

•ꢀ Posted CAS and programmable additive latency

Row Addressing 16K (A0-A13) 8K (A0-A12)

(AL) 0, 1, 2, 3, 4, and 5 supported

•ꢀ WRITE latency = READ latency - 1 tCK

•ꢀ Programmable burst lengths: 4 or 8

Column

1K (A0-A9)

Addressing

Bank Addressing BA0, BA1

BA0, BA1

A10

•ꢀ Adjustable data-output drive strength, full and

Precharge

Addressing

A10

reduced strength options

•ꢀ On-die termination (ODT)

KEY TIMING PARAMETERS

OPTIONS

•ꢀ Conﬁguration(s):

Speed Grade

-25D -3D

64Mx8 (16Mx8x4 banks) IS43/46DR86400C

32Mx16 (8Mx16x4 banks) IS43/46DR16320C

•ꢀ Package:

tRCD

12.5

tRP

tRC

x8: 60-ball BGA (8mm x 10.5mm)

x16: 84-ball WBGA (8mm x 12.5mm)

Timing – Cycle time

2.5ns @CL=5 DDR2-800D

2.5ns @CL=6 DDR2-800E

3.0ns @CL=5 DDR2-667D

3.75ns @CL=4 DDR2-533C

tRAS

tCK @CL=3

tCK @CL=4

tCK @CL=5

tCK @CL=6

3.75 3.75

2.5

—

5ns @CL=3 DDR2-400B

•ꢀ Temperature Range:

Commercial (0°C ≤ Tc ≤ 85°C)

Industrial (-40°C ≤ Tc ≤ 95°C; -40°C ≤ Ta ≤ 85°C)

Automotive, A1 (-40°C ≤ Tc ≤ 95°C; -40°C ≤ Ta ≤ 85°C)

Automotive, A2 (-40°C ≤ Tc; Ta ≤ 105°C)

Tc = Case Temp, Ta = Ambient Temp

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest

version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-

ably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applications

unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. A

3/19/2013

12 3 4 5 6 7...48

中文翻译

下载PDF

与IS43DR86400C-3DBI-TR相关器件

型号	品牌	获取价格	描述	数据表
IS43DR86400C-3DBL	ISSI	获取价格	IC DRAM 512M PARALLEL 60TWBGA
IS43DR86400C-3DBLI	ISSI	获取价格	IC DRAM 512M PARALLEL 60TWBGA
IS43DR86400C-3DBLI-TR	ISSI	获取价格	IC DRAM 512M PARALLEL 60TWBGA
IS43DR86400C-3DBL-TR	ISSI	获取价格	IC DRAM 512M PARALLEL 60TWBGA
IS43DR86400D	ISSI	获取价格	Differential data strobe
IS43DR86400D-25DBLI	ISSI	获取价格	IC DRAM 512M PARALLEL 60TWBGA
IS43DR86400D-25DBLI-TR	ISSI	获取价格	IC DRAM 512M PARALLEL 60TWBGA
IS43DR86400D-3DBI	ISSI	获取价格	IC DRAM 512M PARALLEL 60TWBGA
IS43DR86400D-3DBI-TR	ISSI	获取价格	IC DRAM 512M PARALLEL 60TWBGA
IS43DR86400D-3DBLI-TR	ISSI	获取价格	IC DRAM 512M PARALLEL 60TWBGA

与IS43DR86400C-3DBI-TR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

IS43DR86400C-3DBI-TR

IS43DR86400C-3DBI-TR 数据手册

与IS43DR86400C-3DBI-TR相关器件

与IS43DR86400C-3DBI-TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS43DR86400C-3DBI-TR

IS43DR86400C-3DBI-TR 数据手册

与IS43DR86400C-3DBI-TR相关器件

与IS43DR86400C-3DBI-TR相关文章

您还可以找

您在本页遇到什么问题？