Datasheet > IS43LD16640A

IS43LD16640A

更新时间： 2024-11-28 01:20:19

品牌	Logo	应用领域
美国芯成 - ISSI		双倍数据速率
页数	文件大小	规格书
143页	6899K
描述
Four-bit Pre-fetch DDR Architecture

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IS43LD16640A 数据手册

IS43/46LD16640A

IS43/46LD32320A

1Gb (x16, x32) Mꢁbꢂle LpddR2 s4 sdRAM

AUGUst 2014

FꢀAtURꢀs

dꢀscRiption

The IS43/46LD16640A/32320A is 1,073,741,824 bits

CMOS Mobile Double Data Rate Synchronous DRAMs

organized as 8 banks (S4). The deviceis organized as 8

banks of 8Meg words of 16bits or 4Meg words of 32bits.

This product uses a double-data-rate architecture to

achieve high-speed operation. The double data rate

architecture is essentially a 4N prefetch architecture

with an interface designed to transfer two data words

per clock cycle at the I/O pins. This product offers fully

synchronous operations referenced to both rising and

falling edges of the clock. The data paths are internally

pipelined and 4n bits prefetched to achieve very high

bandwidth.

•ꢀ Low-voltage Core and I/O Power Supplies

VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V,

VDD1 = 1.70-1.95V

•ꢀ High Speed Un-terminated Logic(HSUL_12) I/O

Interface

•ꢀ Clock Frequency Range : 10MHz to 400MHz

(data rate range : 20Mbps to 800 Mbps per I/O)

•ꢀ Four-bit Pre-fetch DDR Architecture

•ꢀ Multiplexed, double data rate, command/ad-

dress inputs

•ꢀ Eight internal banks for concurrent operation

•ꢀ Bidirectional/differential data strobe per byte of

data (DQS/DQS#)

•ꢀ Programmable Read/Write latencies(RL/WL)

AddRꢀss tABLꢀ

Parameter

and burst lengths(4,8 or 16)

32Mx32

R0-R12

C0-C8

64Mx16

R0-R12

C0-C9

•ꢀ Per-bank refresh for concurrent operation

•ꢀ ZQ Calibration

Row Addresses

Column Addresses

Bank Addresses

Refresh Count

•ꢀ On-chip temperature sensor to control self re-

BA0-BA2 BA0-BA2

fresh rate

•ꢀ Partial –array self refresh(PASR) – Bank & Seg-

ment masking

•ꢀ Deep power-down mode(DPD)

kꢀY tiMinG pARAMꢀtꢀRs

•ꢀ Operation Temperature

Commercial (TC = 0°C to 85°C)

Industrial (TC = -40°C to 85°C)

Speed

Grade

Data

Rate

Write

Read tRCD/

Latency Latency tRP

(Mb/s)

Automotive, A1 (T

Automotive, A2 (T

= -40°C to 85°C)

= -40°C to 105°C)

-25

-3

800

667

Typical

options

•ꢀ Conﬁguration:

Note: Other clock frequencies/data rates supported; please

refer to AC timing tables.

− 64Mx16 (8M x 16 x 8 banks)

− 32Mx32 (4M x 32 x 8 banks)

Package:

− 134-ball BGA for x16 / x32

− 168-ball PoP BGA for x32

liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device speciﬁcation before relying on

any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be ex-

pected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon

Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. A

8/6/2014

12 3 4 5 6 7...143

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与IS43LD16640A相关器件

型号	品牌	获取价格	描述	数据表
IS43LD16640A-25BL	ISSI	获取价格	IC DRAM 1G PARALLEL 134TFBGA
IS43LD16640A-25BLI	ISSI	获取价格	IC DRAM 1G PARALLEL 134TFBGA
IS43LD16640A-25BLI-TR	ISSI	获取价格	IC DRAM 1G PARALLEL 134TFBGA
IS43LD16640A-25BL-TR	ISSI	获取价格	IC DRAM 1G PARALLEL 134TFBGA
IS43LD16640A-3BL	ISSI	获取价格	IC DRAM 1G PARALLEL 134TFBGA
IS43LD16640A-3BLI	ISSI	获取价格	IC DRAM 1G PARALLEL 134TFBGA
IS43LD16640A-3BLI-TR	ISSI	获取价格	IC DRAM 1G PARALLEL 134TFBGA
IS43LD16640A-3BL-TR	ISSI	获取价格	IC DRAM 1G PARALLEL 134TFBGA
IS43LD16640C-25BLI	ISSI	获取价格	DDR DRAM, 64MX16, CMOS, PBGA134, FBGA-134
IS43LD16640C-25BLI-TR	ISSI	获取价格	DDR DRAM,

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