是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | DIP, DIP8,.3 | 针数: | 8 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.92 |
最大时钟频率 (fCLK): | 2 MHz | 数据保留时间-最小值: | 100 |
耐久性: | 1000000 Write/Erase Cycles | JESD-30 代码: | R-PDIP-T8 |
JESD-609代码: | e0 | 长度: | 9.3218 mm |
内存密度: | 2048 bit | 内存集成电路类型: | EEPROM |
内存宽度: | 8 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端子数量: | 8 |
字数: | 256 words | 字数代码: | 256 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 256X8 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装等效代码: | DIP8,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | SERIAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 2/5 V |
认证状态: | Not Qualified | 座面最大高度: | 4.572 mm |
串行总线类型: | SPI | 最大待机电流: | 5e-7 A |
子类别: | EEPROMs | 最大压摆率: | 0.005 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 1.8 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 7.62 mm |
最长写入周期时间 (tWC): | 10 ms | 写保护: | HARDWARE/SOFTWARE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS25C02-2PI | ISSI |
获取价格 |
2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM | |
IS25C02-2PLI | ISSI |
获取价格 |
2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM | |
IS25C02-2ZI | ISSI |
获取价格 |
2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM | |
IS25C02-2ZLI | ISSI |
获取价格 |
2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM | |
IS25C02-3GA3 | ISSI |
获取价格 |
EEPROM, 256X8, Serial, CMOS, PDSO8, SOIC-8 | |
IS25C02-3GI | ISSI |
获取价格 |
EEPROM, 256X8, Serial, CMOS, PDSO8, SOIC-8 | |
IS25C02-3GLA3 | ISSI |
获取价格 |
2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM | |
IS25C02-3PA3 | ISSI |
获取价格 |
EEPROM, 256X8, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8 | |
IS25C02-3PI | ISSI |
获取价格 |
EEPROM, 256X8, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8 | |
IS25C02-3PLA3 | ISSI |
获取价格 |
2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM |