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IS25C02-3PI PDF预览

IS25C02-3PI

更新时间： 2024-09-20 19:54:55
品牌 Logo 应用领域
美国芯成 - ISSI 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
14页 58K
描述
EEPROM, 256X8, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8

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中文翻译

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IS25C02-3PI 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：DIP
包装说明：DIP, DIP8,.3针数：8
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.92
最大时钟频率 (fCLK)：5 MHz数据保留时间-最小值：100
耐久性：1000000 Write/Erase CyclesJESD-30 代码：R-PDIP-T8
JESD-609代码：e0长度：9.3218 mm
内存密度：2048 bit内存集成电路类型：EEPROM
内存宽度：8湿度敏感等级：3
功能数量：1端子数量：8
字数：256 words字数代码：256
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：256X8
封装主体材料：PLASTIC/EPOXY封装代码：DIP
封装等效代码：DIP8,.3封装形状：RECTANGULAR
封装形式：IN-LINE并行/串行：SERIAL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：3/5 V
认证状态：Not Qualified座面最大高度：4.572 mm
串行总线类型：SPI最大待机电流：0.000001 A
子类别：EEPROMs最大压摆率：0.005 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：2.5 V
标称供电电压 (Vsup)：5 V表面贴装：NO
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：7.62 mm
最长写入周期时间 (tWC)：5 ms写保护：HARDWARE/SOFTWARE
Base Number Matches：1

IS25C02-3PI 数据手册

 浏览型号IS25C02-3PI的Datasheet PDF文件第2页浏览型号IS25C02-3PI的Datasheet PDF文件第3页浏览型号IS25C02-3PI的Datasheet PDF文件第4页浏览型号IS25C02-3PI的Datasheet PDF文件第5页浏览型号IS25C02-3PI的Datasheet PDF文件第6页浏览型号IS25C02-3PI的Datasheet PDF文件第7页 
®
IS25C02  
IS25C04  
ISSI  
2,048/4,096-BIT SPI SERIAL  
ELECTRICALLY ERASABLE PROM  
AdvancedInformation  
February2004  
FEATURES  
DESCRIPTION  
TheIS25C02andIS25C04areelectricallyerasable  
PROM devices that use the Serial Peripheral Interface  
(SPI) for communications. The IS25C02 is 2Kbit  
(256x 8) and the IS25C04 is 4Kbit (512x 8). The  
IS25C02/04EEPROMsareofferedinwideoperating  
voltages of 1.8V to 5.5V and 2.5V to 5.5V compatible  
with most application voltages. ISSI designed the  
IS25C02/04 to be an efficient SPI EEPROM solution.  
The devices are packaged in 8-pin PDIP and 8-pin  
SOIC.  
• SerialPeripheralInterface(SPI)Compatible  
— Supports SPI Modes 0 (0,0) and 3 (1,1)  
• LowpowerCMOS  
— Active current less than 3.0 mA (2.5V)  
— Standby current less than 1 µA (2.5V)  
• Low-voltage Operation  
— Vcc = 2.5V to 5.5V -3  
— Vcc = 1.8V to 5.5V -2  
• Block Write Protection  
— Protect 1/4, 1/2, or Entire Array  
•
16bytepagewritemode  
The functional features of the IS25C02/04 allow them to  
beamongthemostadvancedserialnon-volatilememo-  
ries available. Each device has a Chip-Select (CS) pin,  
and a 3-wire interface of Serial Data In (SI), Serial Data  
Out (SO), and Serial Clock (SCK). While the 3-wire  
interfaceoftheIS25C02/04providesforhigh-speed  
access, a HOLD pin allows the memories to ignore the  
interface in a suspended state; later the HOLD pin re-  
activates communication without re-initializing the serial  
sequence. A Status Register facilitates a flexible write  
— Partial page writes allowed  
• 10 MHz Clock Rate (5V)  
• Self timed write cycles (5 ms Typical)  
• High-reliability  
— Endurance: 1 million cycles per byte  
— Data retention: 100 years  
8-pinPDIPand 8-pinSOIC packagesareavailable  
•
protectionmechanism,andadevice-readybit(RDY).  
Copyright © 2004 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
IntegratedSiliconSolution,Inc.—1-800-379-4774  
Advanced Information Rev. 00C  
1
02/17/04  
1234567...14

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IS25C04-2PI ISSI

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 		2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
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 		2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C04-2ZI ISSI

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 		2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C04-2ZLI ISSI

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 		2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C04-3GA3 ISSI

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 		EEPROM, 512X8, Serial, CMOS, PDSO8, SOIC-8

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