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IS25C02-3ZLA3 PDF预览

IS25C02-3ZLA3

更新时间： 2024-09-20 03:00:27
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
17页 134K
描述
2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM

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IS25C02-3ZLA3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：TSSOP
包装说明：TSSOP, TSSOP8,.25针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.84
Is Samacsys：N最大时钟频率 (fCLK)：5 MHz
数据保留时间-最小值：100耐久性：1000000 Write/Erase Cycles
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
长度：4.4 mm内存密度：2048 bit
内存集成电路类型：EEPROM内存宽度：8
湿度敏感等级：1功能数量：1
端子数量：8字数：256 words
字数代码：256工作模式：SYNCHRONOUS
最高工作温度：125 °C最低工作温度：-40 °C
组织：256X8封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行：SERIAL峰值回流温度（摄氏度）：260
电源：3/5 V认证状态：Not Qualified
座面最大高度：1.2 mm串行总线类型：SPI
最大待机电流：0.000002 A子类别：EEPROMs
最大压摆率：0.004 mA最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：2.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：AUTOMOTIVE端子面层：Matte Tin (Sn) - annealed
端子形式：GULL WING端子节距：0.65 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
宽度：3 mm最长写入周期时间 (tWC)：5 ms
写保护：HARDWARE/SOFTWAREBase Number Matches：1

IS25C02-3ZLA3 数据手册

 浏览型号IS25C02-3ZLA3的Datasheet PDF文件第2页浏览型号IS25C02-3ZLA3的Datasheet PDF文件第3页浏览型号IS25C02-3ZLA3的Datasheet PDF文件第4页浏览型号IS25C02-3ZLA3的Datasheet PDF文件第5页浏览型号IS25C02-3ZLA3的Datasheet PDF文件第6页浏览型号IS25C02-3ZLA3的Datasheet PDF文件第7页 
®
IS25C02  
IS25C04  
2K-BIT/4K-BIT SPI SERIAL  
ELECTRICALLY ERASABLE PROM  
ISSI  
PreliminaryInformation  
January2006  
FEATURES  
DESCRIPTION  
TheIS25C02andIS25C04areelectricallyerasable  
PROM devices that use the Serial Peripheral Interface  
(SPI) for communications. The IS25C02 is 2Kbit  
(256x 8) and the IS25C04 is 4Kbit (512x 8). The  
IS25C02/04EEPROMsareofferedinawideoperating  
voltage range of 1.8V to 5.5V to be compatible with  
most application voltages. ISSI designed the IS25C02/  
04 to be an efficient SPI EEPROM solution. The  
• SerialPeripheralInterface(SPI)Compatible  
— Supports SPI Modes 0 (0,0) and 3 (1,1)  
• Low-voltageOperation  
— Vcc = 1.8V to 5.5V  
• LowpowerCMOS  
— Active current less than 3.0 mA (2.5V)  
— Standby current less than 1 µA (2.5V)  
• Block Write Protection  
devices are packaged in 8-pin PDIP, 8-pin SOIC, and 8-  
pin TSSOP.  
— Protect 1/4, 1/2, or Entire Array  
• 16 byte page write mode  
— Partial page writes allowed  
• 10 MHz Clock Rate (5V)  
• Self timed write cycles  
— 5 ms max. @ 2.5V  
• High-reliability  
— Endurance: 1 million cycles per byte  
— Data retention: 100 years  
• 8-pin PDIP, 8-pin SOIC, and 8-pin TSSOP packages  
areavailable  
The functional features of the IS25C02/04 allow them to  
beamongthemostadvancedserialnon-volatilememo-  
ries available. Each device has a Chip-Select (CS) pin,  
and a 3-wire interface of Serial Data In (SI), Serial Data  
Out (SO), and Serial Clock (SCK). While the 3-wire  
interfaceoftheIS25C02/04providesforhigh-speed  
access, a HOLD pin allows the memories to ignore the  
interface in a suspended state; later the HOLD pin re-  
activates communication without re-initializing the serial  
sequence. A Status Register facilitates a flexible write  
• Lead-freeavailable  
protectionmechanism,andadevice-readybit(RDY).  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
1
Preliminary Information Rev. 00F  
12/22/05  
1234567...17

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 		2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM

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