是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | SOIC |
包装说明: | SOP, SOP8,.25 | 针数: | 8 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.92 |
最大时钟频率 (fCLK): | 5 MHz | 数据保留时间-最小值: | 100 |
耐久性: | 1000000 Write/Erase Cycles | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e0 | 内存密度: | 4096 bit |
内存集成电路类型: | EEPROM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 8 |
字数: | 512 words | 字数代码: | 512 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 组织: | 512X8 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOP |
封装等效代码: | SOP8,.25 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 并行/串行: | SERIAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 3/5 V |
认证状态: | Not Qualified | 串行总线类型: | SPI |
最大待机电流: | 0.000002 A | 子类别: | EEPROMs |
最大压摆率: | 0.004 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 2.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | AUTOMOTIVE | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
最长写入周期时间 (tWC): | 5 ms | 写保护: | HARDWARE/SOFTWARE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS25C04-3GI | ISSI |
获取价格 |
EEPROM, 512X8, Serial, CMOS, PDSO8, SOIC-8 | |
IS25C04-3GLA3 | ISSI |
获取价格 |
2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM | |
IS25C04-3PA3 | ISSI |
获取价格 |
EEPROM, 512X8, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8 | |
IS25C04-3PLA3 | ISSI |
获取价格 |
2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM | |
IS25C04-3ZA3 | ISSI |
获取价格 |
EEPROM, 512X8, Serial, CMOS, PDSO8, 0.169 INCH, TSSOP-8 | |
IS25C04-3ZLA3 | ISSI |
获取价格 |
2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM | |
IS25C08 | ISSI |
获取价格 |
8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM | |
IS25C08-2CLI | ISSI |
获取价格 |
8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM | |
IS25C08-2DLI | ISSI |
获取价格 |
EEPROM, 1KX8, Serial, CMOS, LEAD FREE, MO-229, DFN-8 | |
IS25C08-2GI | ISSI |
获取价格 |
8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM |