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IS25C08-2DLI PDF预览

IS25C08-2DLI

更新时间: 2024-09-20 19:31:15
品牌 Logo 应用领域
美国芯成 - ISSI 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟内存集成电路
页数 文件大小 规格书
19页 181K
描述
EEPROM, 1KX8, Serial, CMOS, LEAD FREE, MO-229, DFN-8

IS25C08-2DLI 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SON包装说明:HVSON,
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.64最大时钟频率 (fCLK):10 MHz
JESD-30 代码:R-XDSO-N8JESD-609代码:e3
长度:3 mm内存密度:8192 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:1024 words
字数代码:1000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1KX8封装主体材料:UNSPECIFIED
封装代码:HVSON封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE并行/串行:SERIAL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:0.8 mm串行总线类型:SPI
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:2 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

IS25C08-2DLI 数据手册

 浏览型号IS25C08-2DLI的Datasheet PDF文件第2页浏览型号IS25C08-2DLI的Datasheet PDF文件第3页浏览型号IS25C08-2DLI的Datasheet PDF文件第4页浏览型号IS25C08-2DLI的Datasheet PDF文件第5页浏览型号IS25C08-2DLI的Datasheet PDF文件第6页浏览型号IS25C08-2DLI的Datasheet PDF文件第7页 
IS25C08  
IS25C16  
8K-BIT/16K-BIT SPI SERIAL  
ELECTRICALLY ERASABLE PROM  
PreliminaryInformation  
July2008  
FEATURES  
DESCRIPTION  
TheIS25C08andIS25C16areelectricallyerasable  
PROM devices that use the Serial Peripheral Interface  
(SPI) for communications. The IS25C08 is 8Kbit  
(1024x 8) and the IS25C16 is 16Kbit (2048 x 8). The  
IS25C08/16EEPROMsareofferedinawideoperating  
voltage range of 1.8V to 5.5V compatible with most  
application voltages. ISSI designed the IS25C08/16 to  
be an efficient SPI EEPROM solution. The devices are  
packaged in 8-pin PDIP, 8-pin SOIC, 8-pad DFN, 8-pin  
TSSOP, and 8-ball CSP.  
• SerialPeripheralInterface(SPI)Compatible  
— Supports SPI Modes 0 (0,0) and 3 (1,1)  
• Wide-voltageOperation  
— Vcc = 1.8V to 5.5V  
• LowpowerCMOS  
— Operating current less than 1 mA (1.8V)  
— Standby current less than 1 µA (1.8V)  
• Block Write Protection  
— Protect 1/4, 1/2, or Entire Array  
• 16 byte page write mode  
— Partial page writes allowed  
• 10 MHz Clock Rate (5V)  
• Self timed write cycles (5 ms Typical)  
• High-reliability  
— Endurance: 1 million cycles per byte  
— Data retention: 100 years  
• IndustrialandAutomotivetemperatureranges  
• 8-pin PDIP, 8-pin SOIC/SOP, 8-pad DFN, 8-pin  
TSSOP, and 8-ball chip scale packages are available  
• Lead-freeavailable  
The functional features of the IS25C08/16 allow them to  
beamongthemostadvancedserialnon-volatilememo-  
ries available. Each device has a Chip-Select (CS) pin,  
and a 3-wire interface of Serial Data In (SI), Serial Data  
Out (SO), and Serial Clock (SCK). While the 3-wire  
interfaceoftheIS25C08/16providesforhigh-speed  
access, a HOLD pin allows the memories to ignore the  
interface in a suspended state; later the HOLD pin re-  
activates communication without re-initializing the serial  
sequence. A Status Register facilitates a flexible write  
protection mechanism, and a device-ready bit (RDY).  
Copyright © 2007 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc.  
1
PreliminaryInformation Rev. 00K  
07/14/08  

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